onsemi Single FETs, MOSFETs FQAF33N10L

Description
N-Channel 100V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 100V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQAF33N10L-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQAF33N10L-ND
Single FETs, MOSFETs FQAF33N10L-ND
N-Channel 100V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF

N-Channel 100V 25.8A (Tc) 83W (Tc) Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF33N10L - 040331-FQAF33N10L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF33N10L
040331-FQAF33N10L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF33N10L 040331-FQAF33N10L
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040331-FQAF33N10L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PF Dimension: SC-94 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 25.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 40nC @ 5V Max Input Capacitance: 1630pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 12.9A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040331-FQAF33N10L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 25.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 40nC @ 5V
Max Input Capacitance: 1630pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 52 mOhm @ 12.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQAF33N10L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQAF33N10L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQAF33N10L
MOSFET N-CH 100V 25.8A TO3PF

MOSFET N-CH 100V 25.8A TO3PF

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQAF33N10L-ND 040331-FQAF33N10L FQAF33N10L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF33N10L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3; TO-3PF TO-3P-3 Full Pack
V(BR)DSS 100 volts
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