Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 129970-FQAF19N20L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 85W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: SC-94
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 16A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 35nC @ 5V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 140 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 16A TO3PF Product overview: FQAF19N20L from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 16A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 16A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQAF19N20L can be used for catalog matching and distributor lookup.
MOSFET N-CH 200V 16A TO3PF
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 129970-FQAF19N20L | 278-FQAF19N20L | FQAF19N20L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQAF19N20L | 200V 16A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 200 volts | ||
| PD | 85000 milliwatts | 85000 milliwatts |