onsemi Single FETs, MOSFETs FQA47P06

Description
P-Channel 60V 55A (Tc) 214W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
P-Channel 60V 55A (Tc) 214W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - FQA47P06-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA47P06-ND
Single FETs, MOSFETs FQA47P06-ND
P-Channel 60V 55A (Tc) 214W (Tc) Through Hole TO-3P

P-Channel 60V 55A (Tc) 214W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA47P06 - 1039562-FQA47P06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA47P06
1039562-FQA47P06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA47P06 1039562-FQA47P06
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039562-FQA47P06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 214W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 55A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3600pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1039562-FQA47P06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 214W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 26 mOhm @ 27.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA47P06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA47P06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA47P06
MOSFET P-CH 60V 55A TO3P

MOSFET P-CH 60V 55A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQA47P06-ND 1039562-FQA47P06 FQA47P06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA47P06 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3PN TO-3P-3, SC-65-3
V(BR)DSS 60 volts
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