onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA38N30 FQA38N30

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 089155-FQA38N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 38.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 19.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 089155-FQA38N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 38.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 19.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA38N30 - 089155-FQA38N30 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA38N30
089155-FQA38N30
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA38N30 089155-FQA38N30
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 089155-FQA38N30 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 290W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PN Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 38.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 4400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 85 mOhm @ 19.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 089155-FQA38N30
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 290W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 38.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 4400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 85 mOhm @ 19.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - FQA38N30-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQA38N30-ND
Single FETs, MOSFETs FQA38N30-ND
N-Channel 300V 38.4A (Tc) 290W (Tc) Through Hole TO-3P

N-Channel 300V 38.4A (Tc) 290W (Tc) Through Hole TO-3P

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FQA38N30
MOSFET FQA38N30
MOSFET 300V N-Channel QFET

MOSFET 300V N-Channel QFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQA38N30 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQA38N30
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQA38N30
MOSFET N-CH 300V 38.4A TO3P

MOSFET N-CH 300V 38.4A TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 089155-FQA38N30 FQA38N30-ND FQA38N30 FQA38N30
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA38N30 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts
PD 290000 milliwatts
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