MOSFET N-CH 200V 32A TO3PN
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067373-FQA32N20C
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 204W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PN
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 2220pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 82 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
Quantity per package: 450
200V 32A N-Channel Power MOSFET, 82mR RdsOn, TO-3P Product overview: FQA32N20C from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 200V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQA32N20C can be used for catalog matching and distributor lookup.
N-Channel 200V 32A (Tc) 204W (Tc) Through Hole TO-3PN
MOSFET TRANSISTOR, N CHANNEL, 32 A, 200 V, 68 MOHM, 10 V, 4 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 200V 32A TO-3P
MOSFET Transistor, N Channel, 32 A, 200 V, 68 mohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET 200V N-Channel Advance Q-FET
MOSFET N-CH 200V 32A TO3PN
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Radwell International | Utmel Electronic Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FQA32N20C | 067373-FQA32N20C | 278-FQA32N20C | FQA32N20C-ND | 16125588 | 598-FQA32N20C | 31Y1505 | FQA32N20C | FQA32N20C |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQA32N20C | N-Channel 200V 32A MOSFET Transistor | Single FETs, MOSFETs | Transistor | MOSFET N-CH 200V 32A TO-3P | Mosfet Transistor, N Channel, 32 A, 200 V, 68 Mohm, 10 V, 4 V Rohs Compliant Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | |||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | ||||||
| IDSS | 32000 milliamps | ||||||||
| PD | 204000 milliwatts | 204000 milliwatts | 204000 milliwatts | 204000 milliwatts |
