The FODM2701 is a 4-pin full-pitch mini-flat package phototransistor optocoupler with a gallium arsenide infrared emitting diode driving a phototransistor. It has a 5 mm minimum creepage and clearance, and operates with a maximum working insulation voltage of 565 V peak. It meets UL1577 and DIN-EN/IEC60747-5-5 safety standards, with a 3,750 VAC RMS isolation voltage for one minute. The current transfer ratio ranges from 50% to 300% at 5 mA forward current and 5 V collector-emitter voltage. The device supports a continuous collector current of 80 mA and a collector-emitter voltage of 40 V. Operating temperature ranges from -40 °C to 110 °C, and junction temperature to 125 °C. The package has a maximum standoff height of 2.4 mm.
OPTOISO 3.75KV TRANSISTOR 4SMD Product overview: FODM2701BR2 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FODM2701BR2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FODM2701BR2 |
| Product Name | 3.75KV Bipolar Transistor |
| IC(max) | 80 milliamps |
