The FODM2701 is a 4-pin full-pitch mini-flat package phototransistor optocoupler featuring an infrared emitting diode driving a phototransistor. It has a maximum working insulation voltage of 565 V peak, 3,750 VAC RMS isolation for 1 minute per UL1577, and a creepage and clearance of at least 5 mm. Thedevice supports DC input with a current transfer ratio of 50-300% at 5 mA forward current and 5 V collector-emitter voltage. It operates from -40 °C to +110 °C, with a junction temperature up to 125 °C. The collector-emitter voltage rating is 40 V, and the output power dissipation is 150 mW derated above 80 °C. The package has a maximum standoff height of 2.4 mm and is suitable for surface mount assembly.
OPTOISO 3.75KV TRANSISTOR 4SMD Product overview: FODM2701AR2 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-FODM2701AR2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-FODM2701AR2 |
| Product Name | 3.75KV Bipolar Transistor |
| IC(max) | 80 milliamps |
