onsemi Isolators - Optoisolators - Transistor, Photovoltaic Output FOD819

The FOD819 is a high-speed optoisolator featuring a gallium arsenide (GaAs) infrared emitting diode and a phototransistor in a 4-pin dual-in-line package. It is designed for isolated data signal transmission, offering a current transfer ratio ranging from 100% to 600%. The device supports high-speed performance with a maximum frequency of approximately 30 kHz and has a guaranteed minimum collector-emitter breakdown voltage (BVCEO) of 80 V. Safety certifications include UL1577 with an isolation voltage of 5,000 VACRMS for one minute and compliance with DIN EN/IEC 60747,àí5,àí5, which allows for a peak working insulation voltage of 850 V. The FOD819 is suitable for various applications, including digital logic inputs, microprocessor inputs, and power supply monitoring. Operating temperature ranges from -55¬8C to +110¬8C, and the device can handle a continuous forward current of up to 50 mA. The optoisolator also features low rise and fall times of 12 ¬µs and 20 ¬µs, respectively, making it suitable for fast switching applications.