onsemi Isolators - Optoisolators - Transistor, Photovoltaic Output FOD819

The FOD819 is a high-speed optoisolator featuring a gallium arsenide (GaAs) infrared emitting diode and a phototransistor in a 4-pin dual-in-line package. It is designed for isolated data signal transmission, offering a current transfer ratio ranging from 100% to 600%. The device supports high-speed performance with a maximum frequency of approximately 30 kHz and has a guaranteed minimum collector-emitter breakdown voltage (BVCEO) of 80 V. Safety certifications include UL1577 with an isolation voltage of 5,000 VACRMS for one minute and compliance with DIN EN/IEC 60747,àí5,àí5, which allows for a peak working insulation voltage of 850 V. The FOD819 is suitable for various applications, including digital logic inputs, microprocessor inputs, and power supply monitoring. Operating temperature ranges from -55°C to +110°C, and the device can handle a continuous forward current of up to 50 mA. The optoisolator also features low rise and fall times of 12 µs and 20 µs, respectively, making it suitable for fast switching applications.