The FGY75N60SMD is a field stop IGBT designed for high-performance applications such as solar inverters, uninterruptible power supplies (UPS), welders, and power factor correction (PFC) systems. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 75 A at a case temperature of 100¬8C, with a pulsed collector current capability of up to 225 A. The device exhibits a low saturation voltage of 1.9 V at 75 A, which contributes to reduced conduction losses. This IGBT has a maximum power dissipation of 750 W and operates within a wide temperature range of -55¬8C to +175¬8C. It also boasts fast switching characteristics, with turn-on and turn-off delay times of 24 ns and 136 ns, respectively. The total gate charge is 248 nC, making it suitable for applications requiring efficient control. The FGY75N60SMD is RoHS compliant and comes in a TO-247-3LD package, facilitating through-hole mounting. Its reliability and performance make it a viable option for engineers looking for efficient power management solutions.
Trans IGBT Chip N-CH 600V 150A 750000mW 3-Pin Power-247 Tube Product overview: FGY75N60SMD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 150A, 750000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 150A, 750000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGY75N60SMD can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204185-FGY75N60SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 55ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 248nC
Family Name: FGY75N60SMD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PowerTO-247-3
Maximum Current Collector: 150A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 750W
Pulsed Collector Current: 225A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 75A
Total Switching Energy(Ets): 2.3mJ (on), 770μJ (off)
Turn-on and Turn-off delay time: 24ns/136ns
Testing Conditions: 400V, 75A, 3 Ohm, 15V
Alternative Parts (Cross-Reference): IXGR120N60B; IRGP6690D-EPBF; IRGP4690DPbF; IRGP4066-EPbF;
Introduction Date: August 19, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Quantity per package: 450
IGBT Field Stop 600V 150A 750W Through Hole PowerTO-247-3
INSULATED GATE BIPOLAR TRANSISTO
IGBT Transistors 600V, 75A Field Stop IGBT
IGBT 600V 150A 750W POWER-247
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGY75N60SMD | 204185-FGY75N60SMD | FGY75N60SMDFS-ND | FGY75N60SMD | FGY75N60SMD | FGY75N60SMD |
| Product Name | 600V 150A 750000mW IGBT Transistor | IGBTs - Single - FGY75N60SMD | Single IGBTs | Single IGBTs | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 750000 milliwatts | 750000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| VCE(on) | 2.5 volts |
