onsemi Single IGBTs FGY60T120SWD

The FGY60T120SWD is a 1200 V, 60 A N-channel IGBT in a TO-247-3LD package, designed for high-efficiency applications such as solar, UPS, and energy storage systems. It features a maximum junction temperature of 175°C, a collector-to-emitter saturation voltage of up to 2.25 V at 175°C, and a thermal resistance junction-to-case of 0.24 °C/W for the IGBT. The device has a positive temperature coefficient for easy parallel operation and is RoHS compliant. It meets the operating temperature range of −55°C to +175°C and is rated for a pulsed collector current of 240 A. The IGBT and integrated diode support switching with total switching losses of up to 8.5 mJ under specified conditions.