onsemi Single IGBTs FGY60T120SQDN

Description
IGBT 1200V 120A 517W Through Hole TO-247-3
Request a Quote Datasheet
Description
IGBT 1200V 120A 517W Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGY60T120SQDNOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT 1200V 120A 517W Through Hole TO-247-3

IGBT 1200V 120A 517W Through Hole TO-247-3

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Discrete Semiconductor Products - Transistors - IGBTs - Single - 1324946-FGY60T120SQDN - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1324946-FGY60T120SQDN
Discrete Semiconductor Products - Transistors - IGBTs - Single 1324946-FGY60T120SQDN
Manufacturer: onsemi Win Source Part Number: 1324946-FGY60T120SQD N Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Power - Max: 517 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 120 A Current - Collector Pulsed (Icm): 240 A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A Input Type: Standard Gate Charge: 311 nC Td (on/off) @ 25°C: 52ns/296ns Test Condition: 600V, 60A, 10Ohm, 15V Supplier Device Package: TO-247-3 Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: TO-247-3 Variant ECCN: EAR99 Fake Threat In the Open Market: 74 MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: FGY60T120SQDNOS,FGY6 0T120SQDN-ND Base Product Number: FGY60 RoHS Status: ROHS3 Compliant

Manufacturer: onsemi
Win Source Part Number: 1324946-FGY60T120SQDN
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 517 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 120 A
Current - Collector Pulsed (Icm): 240 A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 60A
Input Type: Standard
Gate Charge: 311 nC
Td (on/off) @ 25°C: 52ns/296ns
Test Condition: 600V, 60A, 10Ohm, 15V
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3 Variant
ECCN: EAR99
Fake Threat In the Open Market: 74
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: FGY60T120SQDNOS,FGY60T120SQDN-ND
Base Product Number: FGY60
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Singapore
-1200V 60A IGBT Transistor
279-FGY60T120SQDN
-1200V 60A IGBT Transistor 279-FGY60T120SQDN
IGBT, Ultra Field Stop -1200V 60A, 450-TUBE Product overview: FGY60T120SQDN from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -1200V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, -1200V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGY60T120SQDN can be used for catalog matching and distributor lookup.

IGBT, Ultra Field Stop -1200V 60A, 450-TUBE Product overview: FGY60T120SQDN from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -1200V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, -1200V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGY60T120SQDN can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - FGY60T120SQDN - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGY60T120SQDN
Single IGBTs FGY60T120SQDN
IGBT 1200V 60A UFS

IGBT 1200V 60A UFS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGY60T120SQDN - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGY60T120SQDN
Discrete Semiconductor Products - Transistors - IGBTs FGY60T120SQDN
IGBT 1200V 60A UFS

IGBT 1200V 60A UFS

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGY60T120SQDN
IGBT Transistors FGY60T120SQDN
IGBT Transistors IGBT 1200V 60A UFS

IGBT Transistors IGBT 1200V 60A UFS

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGY60T120SQDNOS-ND 1324946-FGY60T120SQDN 279-FGY60T120SQDN FGY60T120SQDN FGY60T120SQDN FGY60T120SQDN
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single -1200V 60A IGBT Transistor Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 C (-67 F) -55 to 175 C (-67 to 347 F)
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