onsemi IGBTs - Single - FGY40T120SMD FGY40T120SMD

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038703-FGY40T120SMD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 65ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 370nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 882W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A Total Switching Energy(Ets): 2.7mJ (on), 1.1mJ (off) Turn-on and Turn-off delay time: 40ns/475ns Testing Conditions: 600V, 40A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038703-FGY40T120SMD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 65ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 370nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 882W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A Total Switching Energy(Ets): 2.7mJ (on), 1.1mJ (off) Turn-on and Turn-off delay time: 40ns/475ns Testing Conditions: 600V, 40A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGY40T120SMD - 1038703-FGY40T120SMD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGY40T120SMD
1038703-FGY40T120SMD
IGBTs - Single - FGY40T120SMD 1038703-FGY40T120SMD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038703-FGY40T120SMD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 65ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 370nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 882W Pulsed Collector Current: 160A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A Total Switching Energy(Ets): 2.7mJ (on), 1.1mJ (off) Turn-on and Turn-off delay time: 40ns/475ns Testing Conditions: 600V, 40A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038703-FGY40T120SMD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 65ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 370nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 882W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A
Total Switching Energy(Ets): 2.7mJ (on), 1.1mJ (off)
Turn-on and Turn-off delay time: 40ns/475ns
Testing Conditions: 600V, 40A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Single IGBTs - FGY40T120SMD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGY40T120SMD-ND
Single IGBTs FGY40T120SMD-ND
IGBT Trench Field Stop 1200V 80A 882W Through Hole TO-247

IGBT Trench Field Stop 1200V 80A 882W Through Hole TO-247

Buy Now Datasheet
Igbt, 1.2Kv, 80A, 175Deg C, 882W Rohs Compliant Onsemi - 54AH8705 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 1.2Kv, 80A, 175Deg C, 882W Rohs Compliant Onsemi
54AH8705
Igbt, 1.2Kv, 80A, 175Deg C, 882W Rohs Compliant Onsemi 54AH8705
IGBT, 1.2KV, 80A, 175DEG C, 882W ROHS COMPLIANT: YES

IGBT, 1.2KV, 80A, 175DEG C, 882W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGY40T120SMD
IGBT Transistors FGY40T120SMD
IGBT Transistors FS2TIGBT TO247 40A 1200V

IGBT Transistors FS2TIGBT TO247 40A 1200V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGY40T120SMD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGY40T120SMD
Discrete Semiconductor Products - Transistors - IGBTs FGY40T120SMD
IGBT 1200V 80A TO-247

IGBT 1200V 80A TO-247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1038703-FGY40T120SMD FGY40T120SMD-ND 54AH8705 FGY40T120SMD FGY40T120SMD
Product Name IGBTs - Single - FGY40T120SMD Single IGBTs Igbt, 1.2Kv, 80A, 175Deg C, 882W Rohs Compliant Onsemi IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.4 volts
PD 882000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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