onsemi Discrete Semiconductor Products - Transistors - IGBTs - Single FGY100T65SCDT

Manufacturer: onsemi
Win Source Part Number: 1324507-FGY100T65SCDT
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Packaging: Tube
Standard Package: 450
Mounting: Through Hole
Power - Max: 750 W
Reverse Recovery Time (trr): 62 ns
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Switching Energy: 5.4mJ (on), 3.8mJ (off)
Input Type: Standard
Gate Charge: 157 nC
Td (on/off) @ 25°C: 84ns/216ns
Test Condition: 400V, 100A, 4.7Ohm, 15V
Supplier Device Package: TO-247-3
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-247-3 Variant
ECCN: EAR99
Fake Threat In the Open Market: 73
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: FGY100
Product Status: Obsolete

IGBT, Field Stop Trench, Short Circuit Rated, 650 V, 100 A, 450-TUBE Product overview: FGY100T65SCDT from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650 V, 100 A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650 V, 100 A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGY100T65SCDT can be used for catalog matching and distributor lookup.

IGBT Trench Field Stop 650V 200A 750W Through Hole TO-247-3