onsemi IGBTs - Single - FGP5N60LS FGP5N60LS

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067192-FGP5N60LS Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Field Stop Input Type: Standard Gate Charge: 18.3nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 83W Pulsed Collector Current: 36A Collector-emitter saturation voltage(Max): 3.2V @ 12V, 14A Total Switching Energy(Ets): 38μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 4.3ns/36ns Testing Conditions: 400V, 5A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067192-FGP5N60LS Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Field Stop Input Type: Standard Gate Charge: 18.3nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 83W Pulsed Collector Current: 36A Collector-emitter saturation voltage(Max): 3.2V @ 12V, 14A Total Switching Energy(Ets): 38μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 4.3ns/36ns Testing Conditions: 400V, 5A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGP5N60LS - 067192-FGP5N60LS - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGP5N60LS
067192-FGP5N60LS
IGBTs - Single - FGP5N60LS 067192-FGP5N60LS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067192-FGP5N60LS Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Field Stop Input Type: Standard Gate Charge: 18.3nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 83W Pulsed Collector Current: 36A Collector-emitter saturation voltage(Max): 3.2V @ 12V, 14A Total Switching Energy(Ets): 38μJ (on), 130μJ (off) Turn-on and Turn-off delay time: 4.3ns/36ns Testing Conditions: 400V, 5A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067192-FGP5N60LS
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 18.3nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 83W
Pulsed Collector Current: 36A
Collector-emitter saturation voltage(Max): 3.2V @ 12V, 14A
Total Switching Energy(Ets): 38μJ (on), 130μJ (off)
Turn-on and Turn-off delay time: 4.3ns/36ns
Testing Conditions: 400V, 5A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
Single IGBTs - FGP5N60LS-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGP5N60LS-ND
Single IGBTs FGP5N60LS-ND
IGBT Field Stop 600V 10A 83W Through Hole TO-220-3

IGBT Field Stop 600V 10A 83W Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGP5N60LS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGP5N60LS
Discrete Semiconductor Products - Transistors - IGBTs FGP5N60LS
IGBT FIELD STOP 600V 10A TO220-3

IGBT FIELD STOP 600V 10A TO220-3

Supplier's Site
Igbt Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi - 41T0521 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi
41T0521
Igbt Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi 41T0521
IGBT Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes

IGBT Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGP5N60LS
IGBT Transistors FGP5N60LS
IGBT Transistors 600V/5A Field Stop Low Vcesat

IGBT Transistors 600V/5A Field Stop Low Vcesat

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 067192-FGP5N60LS FGP5N60LS-ND FGP5N60LS 41T0521 FGP5N60LS
Product Name IGBTs - Single - FGP5N60LS Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs Igbt Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, To-220Ab, 3 Rohs Compliant Onsemi IGBT Transistors
VCE(on) 3.2 volts
PD 83000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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