onsemi Single IGBTs FGP40N6S2

Description
IGBT 600V 75A 290W Through Hole TO-220-3
Request a Quote Datasheet
Description
IGBT 600V 75A 290W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGP40N6S2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGP40N6S2-ND
Single IGBTs FGP40N6S2-ND
IGBT 600V 75A 290W Through Hole TO-220-3

IGBT 600V 75A 290W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - FGP40N6S2 - 1174203-FGP40N6S2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGP40N6S2
1174203-FGP40N6S2
IGBTs - Single - FGP40N6S2 1174203-FGP40N6S2
Manufacturer: ON Semiconductor Win Source Part Number: 1174203-FGP40N6S2 Packaging: Tube Mounting Style: Through Hole Current - Collector Pulsed (Icm): 180A Switching Energy: 115μJ (on), 195μJ (off) Input Type: Standard Gate Charge: 35nC Test Condition: 390V, 20A, 3Ohm, 15V Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 75A Voltage - Collector Emitter Breakdown (Maximum): 600V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 400 MSL Level: 1 (Unlimited) Maximum Power: 290W Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 20A Td (on/off) at 25°C: 8ns/35ns

Manufacturer: ON Semiconductor
Win Source Part Number: 1174203-FGP40N6S2
Packaging: Tube
Mounting Style: Through Hole
Current - Collector Pulsed (Icm): 180A
Switching Energy: 115μJ (on), 195μJ (off)
Input Type: Standard
Gate Charge: 35nC
Test Condition: 390V, 20A, 3Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 75A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 400
MSL Level: 1 (Unlimited)
Maximum Power: 290W
Vce(on) (Maximum) at Vge, Ic: 2.7V at 15V, 20A
Td (on/off) at 25°C: 8ns/35ns

Buy Now
Discrete Semiconductor Products - Transistors - IGBTs - FGP40N6S2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGP40N6S2
Discrete Semiconductor Products - Transistors - IGBTs FGP40N6S2
IGBT 600V 75A 290W TO220AB

IGBT 600V 75A 290W TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGP40N6S2-ND 1174203-FGP40N6S2 FGP40N6S2
Product Name Single IGBTs IGBTs - Single - FGP40N6S2 Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data