onsemi Single IGBTs FGP30N6S2

Description
IGBT 600V 45A 167W Through Hole TO-220-3
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Description
IGBT 600V 45A 167W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single IGBTs - FGP30N6S2-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGP30N6S2-ND
Single IGBTs FGP30N6S2-ND
IGBT 600V 45A 167W Through Hole TO-220-3

IGBT 600V 45A 167W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - FGP30N6S2 - 1174202-FGP30N6S2 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGP30N6S2
1174202-FGP30N6S2
IGBTs - Single - FGP30N6S2 1174202-FGP30N6S2
Manufacturer: ON Semiconductor Win Source Part Number: 1174202-FGP30N6S2 Packaging: Tube Mounting Style: Through Hole Current - Collector Pulsed (Icm): 108A Switching Energy: 55μJ (on), 100μJ (off) Input Type: Standard Gate Charge: 23nC Test Condition: 390V, 12A, 10Ohm, 15V Categories: Discrete Semiconductor Products Supplier Device Package: TO-220-3 Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 45A Voltage - Collector Emitter Breakdown (Maximum): 600V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 400 MSL Level: 1 (Unlimited) Maximum Power: 167W Vce(on) (Maximum) at Vge, Ic: 2.5V at 15V, 12A Td (on/off) at 25°C: 6ns/40ns

Manufacturer: ON Semiconductor
Win Source Part Number: 1174202-FGP30N6S2
Packaging: Tube
Mounting Style: Through Hole
Current - Collector Pulsed (Icm): 108A
Switching Energy: 55μJ (on), 100μJ (off)
Input Type: Standard
Gate Charge: 23nC
Test Condition: 390V, 12A, 10Ohm, 15V
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 45A
Voltage - Collector Emitter Breakdown (Maximum): 600V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 400
MSL Level: 1 (Unlimited)
Maximum Power: 167W
Vce(on) (Maximum) at Vge, Ic: 2.5V at 15V, 12A
Td (on/off) at 25°C: 6ns/40ns

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Discrete Semiconductor Products - Transistors - IGBTs - FGP30N6S2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGP30N6S2
Discrete Semiconductor Products - Transistors - IGBTs FGP30N6S2
IGBT 600V 45A 167W TO220AB

IGBT 600V 45A 167W TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGP30N6S2-ND 1174202-FGP30N6S2 FGP30N6S2
Product Name Single IGBTs IGBTs - Single - FGP30N6S2 Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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