onsemi Single IGBTs FGP20N60UFDTU

Description
IGBT 600V 40A 165W TO220
Request a Quote Datasheet
Description
IGBT 600V 40A 165W TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGP20N60UFDTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGP20N60UFDTU
Single IGBTs FGP20N60UFDTU
IGBT 600V 40A 165W TO220

IGBT 600V 40A 165W TO220

Supplier's Site Datasheet
Single IGBTs - FGP20N60UFDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGP20N60UFDTU-ND
Single IGBTs FGP20N60UFDTU-ND
IGBT Field Stop 600V 40A 165W Through Hole TO-220-3

IGBT Field Stop 600V 40A 165W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - FGP20N60UFDTU - 040295-FGP20N60UFDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGP20N60UFDTU
040295-FGP20N60UFDTU
IGBTs - Single - FGP20N60UFDTU 040295-FGP20N60UFDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040295-FGP20N60UFDTU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 35ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 63nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 165W Pulsed Collector Current: 60A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 20A Total Switching Energy(Ets): 380μJ (on), 260μJ (off) Turn-on and Turn-off delay time: 13ns/87ns Testing Conditions: 400V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040295-FGP20N60UFDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 35ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 63nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 165W
Pulsed Collector Current: 60A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 20A
Total Switching Energy(Ets): 380μJ (on), 260μJ (off)
Turn-on and Turn-off delay time: 13ns/87ns
Testing Conditions: 400V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGP20N60UFDTU
IGBT Transistors FGP20N60UFDTU
IGBT Transistors 600V, 20A Field Stop

IGBT Transistors 600V, 20A Field Stop

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGP20N60UFDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGP20N60UFDTU
Discrete Semiconductor Products - Transistors - IGBTs FGP20N60UFDTU
IGBT 600V 40A 165W TO220

IGBT 600V 40A 165W TO220

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGP20N60UFDTU FGP20N60UFDTU-ND 040295-FGP20N60UFDTU FGP20N60UFDTU FGP20N60UFDTU
Product Name Single IGBTs Single IGBTs IGBTs - Single - FGP20N60UFDTU IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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