onsemi Single IGBTs FGP15N60UNDF

Description
IGBT NPT 600V 30A 178W Through Hole TO-220-3
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Description
IGBT NPT 600V 30A 178W Through Hole TO-220-3
Request a Quote Datasheet

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Product
Description
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Single IGBTs - FGP15N60UNDF-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGP15N60UNDF-ND
Single IGBTs FGP15N60UNDF-ND
IGBT NPT 600V 30A 178W Through Hole TO-220-3

IGBT NPT 600V 30A 178W Through Hole TO-220-3

Buy Now Datasheet
IGBTs - Single - FGP15N60UNDF - 1038689-FGP15N60UNDF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGP15N60UNDF
1038689-FGP15N60UNDF
IGBTs - Single - FGP15N60UNDF 1038689-FGP15N60UNDF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038689-FGP15N60UNDF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 82.4ns IGBT Type: NPT Input Type: Standard Gate Charge: 43nC Family Name: FGP15N60UNDF Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 30A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 178W Pulsed Collector Current: 45A Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A Total Switching Energy(Ets): 370μJ (on), 67μJ (off) Turn-on and Turn-off delay time: 9.3ns/54.8ns Testing Conditions: 400V, 15A, 10 Ohm, 15V Alternative Parts (Cross-Reference): STGP10NB60SD; STGP20M65DF2; STGP10NB60S; STGP20V60F; Introduction Date: December 08, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038689-FGP15N60UNDF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 82.4ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 43nC
Family Name: FGP15N60UNDF
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 30A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 178W
Pulsed Collector Current: 45A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 15A
Total Switching Energy(Ets): 370μJ (on), 67μJ (off)
Turn-on and Turn-off delay time: 9.3ns/54.8ns
Testing Conditions: 400V, 15A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): STGP10NB60SD; STGP20M65DF2; STGP10NB60S; STGP20V60F;
Introduction Date: December 08, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 800

Buy Now Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGP15N60UNDF
IGBT Transistors FGP15N60UNDF
IGBT Transistors 600V 15A NPT IGBT

IGBT Transistors 600V 15A NPT IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGP15N60UNDF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGP15N60UNDF
Discrete Semiconductor Products - Transistors - IGBTs FGP15N60UNDF
IGBT 600V 30A 178W TO220-3

IGBT 600V 30A 178W TO220-3

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGP15N60UNDF-ND 1038689-FGP15N60UNDF FGP15N60UNDF FGP15N60UNDF
Product Name Single IGBTs IGBTs - Single - FGP15N60UNDF IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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