onsemi IGBTs - Single - FGL60N100BNTDTU FGL60N100BNTDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040294-FGL60N100BNTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 1.2μs IGBT Type: NPT and Trench Input Type: Standard Gate Charge: 275nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 180W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A Turn-on and Turn-off delay time: 140ns/630ns Testing Conditions: 600V, 60A, 51 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 375
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040294-FGL60N100BNTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 1.2μs IGBT Type: NPT and Trench Input Type: Standard Gate Charge: 275nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 180W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A Turn-on and Turn-off delay time: 140ns/630ns Testing Conditions: 600V, 60A, 51 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 375
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGL60N100BNTDTU - 040294-FGL60N100BNTDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGL60N100BNTDTU
040294-FGL60N100BNTDTU
IGBTs - Single - FGL60N100BNTDTU 040294-FGL60N100BNTDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040294-FGL60N100BNTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 1.2μs IGBT Type: NPT and Trench Input Type: Standard Gate Charge: 275nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 180W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A Turn-on and Turn-off delay time: 140ns/630ns Testing Conditions: 600V, 60A, 51 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance Quantity per package: 375

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040294-FGL60N100BNTDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 1.2μs
IGBT Type: NPT and Trench
Input Type: Standard
Gate Charge: 275nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Turn-on and Turn-off delay time: 140ns/630ns
Testing Conditions: 600V, 60A, 51 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 375

Buy Now Datasheet
Singapore
1kV 60A 180W IGBT Transistor
279-FGL60N100BNTDTU
1kV 60A 180W IGBT Transistor 279-FGL60N100BNTDTU
1kV 60A NPT Trench IGBT, TO-264, 180W Product overview: FGL60N100BNTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1kV, 60A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1kV, 60A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL60N100BNTDTU can be used for catalog matching and distributor lookup.

1kV 60A NPT Trench IGBT, TO-264, 180W Product overview: FGL60N100BNTDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1kV, 60A, 180W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1kV, 60A, 180W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL60N100BNTDTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - FGL60N100BNTDTU-ND - DigiKey
Thief River Falls, MN, United States
IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

Buy Now Datasheet
Single IGBTs FGL60N100BNTDTU
IGBT 1000V 60A 180W TO264

IGBT 1000V 60A 180W TO264

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGL60N100BNTDTU
IGBT Transistors FGL60N100BNTDTU
IGBT Transistors HIGH POWER

IGBT Transistors HIGH POWER

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGL60N100BNTDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGL60N100BNTDTU
Discrete Semiconductor Products - Transistors - IGBTs FGL60N100BNTDTU
IGBT 1000V 60A 180W TO264

IGBT 1000V 60A 180W TO264

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 040294-FGL60N100BNTDTU 279-FGL60N100BNTDTU FGL60N100BNTDTU-ND FGL60N100BNTDTU FGL60N100BNTDTU FGL60N100BNTDTU
Product Name IGBTs - Single - FGL60N100BNTDTU 1kV 60A 180W IGBT Transistor Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 2.9 volts
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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