onsemi Single IGBTs FGL60N100BNTD

Description
IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
  • Single IGBTs - FGL60N100BNTDFS-ND - DigiKey
    DigiKey
  • Single IGBTs - FGL60N100BNTD - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • IGBTs - Single - FGL60N100BNTD - 088539-FGL60N100BNTD - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - FGL60N100BNTD - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins - 598-FGL60N100BNTD - Utmel Electronic Limited
    Utmel Electronic Limited
  • Igbt, Single, N-Ch, 1Kv, 60A, To-247; Continuous Collector Current Onsemi - 09J6255 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGL60N100BNTDFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGL60N100BNTDFS-ND
Single IGBTs FGL60N100BNTDFS-ND
IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3

Buy Now Datasheet
Single IGBTs - FGL60N100BNTD - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGL60N100BNTD
Single IGBTs FGL60N100BNTD
IGBT 1000V 60A 180W TO264

IGBT 1000V 60A 180W TO264

Supplier's Site Datasheet
IGBTs - Single - FGL60N100BNTD - 088539-FGL60N100BNTD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGL60N100BNTD
088539-FGL60N100BNTD
IGBTs - Single - FGL60N100BNTD 088539-FGL60N100BNTD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 088539-FGL60N100BNTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 1.2μs IGBT Type: NPT and Trench Input Type: Standard Gate Charge: 275nC Family Name: FGL60N100BNTD Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264 Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V Maximum Power Dissipation: 180W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A Turn-on and Turn-off delay time: 140ns/630ns Testing Conditions: 600V, 60A, 51 Ohm, 15V Alternative Parts (Cross-Reference): STGWT28IH125DF; IRG4PF50WD-201P ; IHW30N100TFKSA1; STGWA25H120F2; Introduction Date: March 08, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance Quantity per package: 375

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 088539-FGL60N100BNTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 1.2μs
IGBT Type: NPT and Trench
Input Type: Standard
Gate Charge: 275nC
Family Name: FGL60N100BNTD
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Turn-on and Turn-off delay time: 140ns/630ns
Testing Conditions: 600V, 60A, 51 Ohm, 15V
Alternative Parts (Cross-Reference): STGWT28IH125DF; IRG4PF50WD-201P ; IHW30N100TFKSA1; STGWA25H120F2;
Introduction Date: March 08, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 375

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGL60N100BNTD - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGL60N100BNTD
Discrete Semiconductor Products - Transistors - IGBTs FGL60N100BNTD
IGBT 1000V 60A 180W TO264

IGBT 1000V 60A 180W TO264

Supplier's Site
FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins - 598-FGL60N100BNTD - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins
598-FGL60N100BNTD
FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins 598-FGL60N100BNTD
FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins

FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
FGL60N100BNTD
IGBT Transistors FGL60N100BNTD
IGBT Transistors HIGH POWER

IGBT Transistors HIGH POWER

Buy Now Datasheet
Igbt, Single, N-Ch, 1Kv, 60A, To-247; Continuous Collector Current Onsemi - 09J6255 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt, Single, N-Ch, 1Kv, 60A, To-247; Continuous Collector Current Onsemi
09J6255
Igbt, Single, N-Ch, 1Kv, 60A, To-247; Continuous Collector Current Onsemi 09J6255
IGBT, SINGLE, N-CH, 1KV, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:180W; Collector Emitter Voltage Max:1kV; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

IGBT, SINGLE, N-CH, 1KV, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:180W; Collector Emitter Voltage Max:1kV; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGL60N100BNTDFS-ND FGL60N100BNTD 088539-FGL60N100BNTD FGL60N100BNTD 598-FGL60N100BNTD FGL60N100BNTD 09J6255
Product Name Single IGBTs Single IGBTs IGBTs - Single - FGL60N100BNTD Discrete Semiconductor Products - Transistors - IGBTs FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins IGBT Transistors Igbt, Single, N-Ch, 1Kv, 60A, To-247; Continuous Collector Current Onsemi
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) ? to 150 C (? to 302 F)
Package Type TO-264-3, TO-264AA TO-264-3, TO-264AA SOT3; TO-264 TO-3; TO-247
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube Tube; Tube
Structure NPT; NPT and Trench
VCE(on) 2.9 volts 1.5 volts
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