IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 088539-FGL60N100BNTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 1.2μs
IGBT Type: NPT and Trench
Input Type: Standard
Gate Charge: 275nC
Family Name: FGL60N100BNTD
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.9V @ 15V, 60A
Turn-on and Turn-off delay time: 140ns/630ns
Testing Conditions: 600V, 60A, 51 Ohm, 15V
Alternative Parts (Cross-Reference): STGWT28IH125DF; IRG4PF50WD-201P ; IHW30N100TFKSA1; STGWA25H120F2;
Introduction Date: March 08, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 375
IGBT 1000V 60A 180W TO264
IGBT N-CH 1kV 60A TO-264 Product overview: FGL60N100BNTD from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1kV, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1kV, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL60N100BNTD can be used for catalog matching and distributor lookup.
FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins
IGBT Transistors HIGH POWER
IGBT, SINGLE, N-CH, 1KV, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:180W; Collector Emitter Voltage Max:1kV; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes
IGBT 1000V 60A 180W TO264
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGL60N100BNTDFS-ND | 088539-FGL60N100BNTD | FGL60N100BNTD | 279-FGL60N100BNTD | 598-FGL60N100BNTD | FGL60N100BNTD | 09J6255 | FGL60N100BNTD |
| Product Name | Single IGBTs | IGBTs - Single - FGL60N100BNTD | Single IGBTs | 1kV 60A IGBT Transistor | FAIRCHILD SEMICONDUCTOR FGL60N100BNTDIGBT Single Transistor, 60 A, 2.9 V, 180 W, 1 kV, TO-264, 3 Pins | IGBT Transistors | Igbt, Single, N-Ch, 1Kv, 60A, To-247; Continuous Collector Current Onsemi | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-264-3, TO-264AA | SOT3; TO-264 | TO-264-3, TO-264AA | TO-3; TO-247 | ||||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube | ||||
| Structure | NPT; NPT and Trench | |||||||
| VCE(on) | 2.9 volts | 1.5 volts |
