Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067191-FGL40N120ANDT
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 112ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 220nC
Family Name: FGL40N120A
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264
Maximum Current Collector: 64A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 500W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 3.2V @ 15V, 40A
Total Switching Energy(Ets): 2.3mJ (on), 1.1mJ (off)
Turn-on and Turn-off delay time: 15ns/110ns
Testing Conditions: 600V, 40A, 5 Ohm, 15V
Alternative Parts (Cross-Reference): IKW40N120T2XK; STGWA40N120KD; IXYH30N120C3D1;
Introduction Date: September 14, 2004
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: 2023
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 375
1200V 64A IGBT Transistor N-CH TO-264 Product overview: FGL40N120ANDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 64A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 64A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL40N120ANDTU can be used for catalog matching and distributor lookup.
IGBT NPT 1200V 64A 500W Through Hole TO-264-3
SINGLE IGBT, 1.2KV, 64A; DC Collector Current:64A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes
IGBT,N CH,FAST,W/DIO,1200V,
IGBT NPT 1200V 64A TO264-3
IGBT NPT 1200V 64A TO264-3
IGBT Transistors 1200V NPT IGBT
SINGLE IGBT, 1.2KV, 64A, DC COLLECTOR CURRENT:64A, COLLECTOR EMITTER SATURATION VOLTAGE VCE(ON):1.2KV, POWER DISSIPATION PD:500W, COLLECTOR EMITTER VOLTAGE V(BR)CEO:1.2KV, NO. OF PINS:3PINS, OPERATING TEMPERATURE MAX:150°C, MSL:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 067191-FGL40N120ANDTU | 279-FGL40N120ANDTU | FGL40N120ANDTU-ND | 43K6885 | 22AC3002 | FGL40N120ANDTU | FGL40N120ANDTU | FGL40N120ANDTU | 16130932 |
| Product Name | IGBTs - Single - FGL40N120ANDTU | 1200V 64A IGBT Transistor | Single IGBTs | Single Igbt, 1.2Kv, 64A; Dc Collector Current Onsemi | Igbt,n Ch,fast,w/dio,1200V,64A,to264; Transistor Type Onsemi | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs | IGBT Transistors | IGBT |
| VCE(on) | 3.2 volts | ||||||||
| PD | 500000 milliwatts | 500000 milliwatts | 500000 milliwatts | 500000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ? to 150 C (? to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
