onsemi Single IGBTs FGL35N120FTDTU

Description
IGBT Trench Field Stop 1200V 70A 368W Through Hole TO-264-3
Request a Quote Datasheet
Description
IGBT Trench Field Stop 1200V 70A 368W Through Hole TO-264-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - FGL35N120FTDTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGL35N120FTDTU-ND
Single IGBTs FGL35N120FTDTU-ND
IGBT Trench Field Stop 1200V 70A 368W Through Hole TO-264-3

IGBT Trench Field Stop 1200V 70A 368W Through Hole TO-264-3

Buy Now Datasheet
Singapore, Singapore
IGBT Transistor
279-FGL35N120FTDTU
IGBT Transistor 279-FGL35N120FTDTU
INSULATED GATE BIPOLAR TRANSISTO Product overview: FGL35N120FTDTU from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL35N120FTDTU can be used for catalog matching and distributor lookup.

INSULATED GATE BIPOLAR TRANSISTO Product overview: FGL35N120FTDTU from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL35N120FTDTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Single - FGL35N120FTDTU - 1038686-FGL35N120FTDTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGL35N120FTDTU
1038686-FGL35N120FTDTU
IGBTs - Single - FGL35N120FTDTU 1038686-FGL35N120FTDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038686-FGL35N120FTD TU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 337ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 210nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-264-3 Maximum Current Collector: 70A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 368W Pulsed Collector Current: 105A Collector-emitter saturation voltage(Max): 2.2V @ 15V, 35A Total Switching Energy(Ets): 2.5mJ (on), 1.7mJ (off) Turn-on and Turn-off delay time: 34ns/172ns Testing Conditions: 600V, 35A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 375

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038686-FGL35N120FTDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 337ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 210nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264-3
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 368W
Pulsed Collector Current: 105A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 35A
Total Switching Energy(Ets): 2.5mJ (on), 1.7mJ (off)
Turn-on and Turn-off delay time: 34ns/172ns
Testing Conditions: 600V, 35A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 375

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGL35N120FTDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGL35N120FTDTU
Discrete Semiconductor Products - Transistors - IGBTs FGL35N120FTDTU
IGBT TRENCH/FS 1200V 70A TO264-3

IGBT TRENCH/FS 1200V 70A TO264-3

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGL35N120FTDTU
IGBT Transistors FGL35N120FTDTU
IGBT Transistors 1200V 35A Trench IGBT

IGBT Transistors 1200V 35A Trench IGBT

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FGL35N120FTDTU-ND 279-FGL35N120FTDTU 1038686-FGL35N120FTDTU FGL35N120FTDTU FGL35N120FTDTU
Product Name Single IGBTs IGBT Transistor IGBTs - Single - FGL35N120FTDTU Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-264-3, TO-264AA Bulk SOT3; TO-264-3
Packing Method Tube Bulk Rail; Tube; Tube/Rail Tube; Tube
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