IGBT Trench Field Stop 1200V 70A 368W Through Hole TO-264-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038686-FGL35N120FTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 337ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 210nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-264-3
Maximum Current Collector: 70A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 368W
Pulsed Collector Current: 105A
Collector-emitter saturation voltage(Max): 2.2V @ 15V, 35A
Total Switching Energy(Ets): 2.5mJ (on), 1.7mJ (off)
Turn-on and Turn-off delay time: 34ns/172ns
Testing Conditions: 600V, 35A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 375
INSULATED GATE BIPOLAR TRANSISTO Product overview: FGL35N120FTDTU from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGL35N120FTDTU can be used for catalog matching and distributor lookup.
IGBT Transistors 1200V 35A Trench IGBT
IGBT TRENCH/FS 1200V 70A TO264-3
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGL35N120FTDTU-ND | 1038686-FGL35N120FTDTU | 279-FGL35N120FTDTU | FGL35N120FTDTU | FGL35N120FTDTU |
| Product Name | Single IGBTs | IGBTs - Single - FGL35N120FTDTU | IGBT Transistor | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | TO-264-3, TO-264AA | SOT3; TO-264-3 | Bulk | ||
| Packing Method | Tube | Rail; Tube; Tube/Rail | Bulk | Tube; Tube |