onsemi Through-Hole 600V 80A IGBT Transistor FGH80N60FDTU

600V 80A IGBT TO-247 Through Hole Product overview: FGH80N60FDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 80A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 80A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH80N60FDTU can be used for catalog matching and distributor lookup.

IGBT Field Stop 600V 80A 290W Through Hole TO-247-3

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204183-FGH80N60FDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 36ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 120nC
Family Name: FGH80N60FD
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 290W
Pulsed Collector Current: 160A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 40A
Total Switching Energy(Ets): 1mJ (on), 520μJ (off)
Turn-on and Turn-off delay time: 21ns/126ns
Testing Conditions: 400V, 40A, 10 Ohm, 15V
Alternative Parts (Cross-Reference): STGW40H65FB; STGW40V60DF; STGW40V60F; STGWA50HP65FB2;
Introduction Date: December 02, 2007
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 450