onsemi 650V 150A 187W IGBT Transistor FGH75T65UPD

Description
IGBTs 650V 150A 187W Product overview: FGH75T65UPD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 150A, 187W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 150A, 187W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75T65UPD can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
IGBTs 650V 150A 187W Product overview: FGH75T65UPD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 150A, 187W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 150A, 187W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75T65UPD can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
650V 150A 187W IGBT Transistor
279-FGH75T65UPD
650V 150A 187W IGBT Transistor 279-FGH75T65UPD
IGBTs 650V 150A 187W Product overview: FGH75T65UPD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 150A, 187W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 150A, 187W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75T65UPD can be used for catalog matching and distributor lookup.

IGBTs 650V 150A 187W Product overview: FGH75T65UPD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 150A, 187W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 150A, 187W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75T65UPD can be used for catalog matching and distributor lookup.

Supplier's Site
IGBTs - Single - FGH75T65UPD - 001177-FGH75T65UPD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH75T65UPD
001177-FGH75T65UPD
IGBTs - Single - FGH75T65UPD 001177-FGH75T65UPD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 001177-FGH75T65UPD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 85ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 578nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 375W Pulsed Collector Current: 225A Collector-emitter saturation voltage(Max): 2.3V @ 15V, 75A Total Switching Energy(Ets): 2.85mJ (on), 1.2mJ (off) Turn-on and Turn-off delay time: 32ns/166ns Testing Conditions: 400V, 75A, 3 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001177-FGH75T65UPD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 85ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 578nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 150A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 225A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 75A
Total Switching Energy(Ets): 2.85mJ (on), 1.2mJ (off)
Turn-on and Turn-off delay time: 32ns/166ns
Testing Conditions: 400V, 75A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - FGH75T65UPD-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH75T65UPD-ND
Single IGBTs FGH75T65UPD-ND
IGBT Trench Field Stop 650V 150A 375W Through Hole TO-247-3

IGBT Trench Field Stop 650V 150A 375W Through Hole TO-247-3

Buy Now Datasheet
Single IGBTs - FGH75T65UPD - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGH75T65UPD
Single IGBTs FGH75T65UPD
IGBT 650V 150A 375W TO-247AB

IGBT 650V 150A 375W TO-247AB

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
FGH75T65UPD
IGBT Transistors FGH75T65UPD
IGBT Transistors 650V 150A 187W

IGBT Transistors 650V 150A 187W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH75T65UPD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH75T65UPD
Discrete Semiconductor Products - Transistors - IGBTs FGH75T65UPD
IGBT 650V 150A 375W TO-247AB

IGBT 650V 150A 375W TO-247AB

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 279-FGH75T65UPD 001177-FGH75T65UPD FGH75T65UPD-ND FGH75T65UPD FGH75T65UPD FGH75T65UPD
Product Name 650V 150A 187W IGBT Transistor IGBTs - Single - FGH75T65UPD Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
PD 187 milliwatts 375000 milliwatts
Package Type Tube TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3
Packing Method Tube Rail; Tube; Tube/Rail Tube Tube; Tube
Unlock Full Specs
to access all available technical data