Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001177-FGH75T65UPD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 85ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 578nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 150A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 375W
Pulsed Collector Current: 225A
Collector-emitter saturation voltage(Max): 2.3V @ 15V, 75A
Total Switching Energy(Ets): 2.85mJ (on), 1.2mJ (off)
Turn-on and Turn-off delay time: 32ns/166ns
Testing Conditions: 400V, 75A, 3 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
IGBT Trench Field Stop 650V 150A 375W Through Hole TO-247-3
IGBTs 650V 150A 187W Product overview: FGH75T65UPD from Fairchild (onsemi) is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 150A, 187W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 650V, 150A, 187W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75T65UPD can be used for catalog matching and distributor lookup.
IGBT 650V 150A 375W TO-247AB
IGBT Transistors 650V 150A 187W
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 001177-FGH75T65UPD | FGH75T65UPD-ND | 279-FGH75T65UPD | FGH75T65UPD | FGH75T65UPD | FGH75T65UPD |
| Product Name | IGBTs - Single - FGH75T65UPD | Single IGBTs | 650V 150A 187W IGBT Transistor | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| VCE(on) | 2.3 volts | |||||
| PD | 375000 milliwatts | 187 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |