onsemi IGBTs - Single - FGH75N60UFTU FGH75N60UFTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040293-FGH75N60UFTU Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Field Stop Input Type: Standard Gate Charge: 250nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 452W Pulsed Collector Current: 225A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 75A Total Switching Energy(Ets): 3.05mJ (on), 1.35mJ (off) Turn-on and Turn-off delay time: 27ns/128ns Testing Conditions: 400V, 75A, 3 Ohm, 15V Alternative Parts (Cross-Reference): IGW75N60H3; STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 450
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040293-FGH75N60UFTU Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Field Stop Input Type: Standard Gate Charge: 250nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 452W Pulsed Collector Current: 225A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 75A Total Switching Energy(Ets): 3.05mJ (on), 1.35mJ (off) Turn-on and Turn-off delay time: 27ns/128ns Testing Conditions: 400V, 75A, 3 Ohm, 15V Alternative Parts (Cross-Reference): IGW75N60H3; STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGH75N60UFTU - 040293-FGH75N60UFTU - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH75N60UFTU
040293-FGH75N60UFTU
IGBTs - Single - FGH75N60UFTU 040293-FGH75N60UFTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040293-FGH75N60UFTU Packaging: Tube/Rail Mounting: Through Hole IGBT Type: Field Stop Input Type: Standard Gate Charge: 250nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 150A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 452W Pulsed Collector Current: 225A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 75A Total Switching Energy(Ets): 3.05mJ (on), 1.35mJ (off) Turn-on and Turn-off delay time: 27ns/128ns Testing Conditions: 400V, 75A, 3 Ohm, 15V Alternative Parts (Cross-Reference): IGW75N60H3; STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040293-FGH75N60UFTU
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 250nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 150A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 452W
Pulsed Collector Current: 225A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 75A
Total Switching Energy(Ets): 3.05mJ (on), 1.35mJ (off)
Turn-on and Turn-off delay time: 27ns/128ns
Testing Conditions: 400V, 75A, 3 Ohm, 15V
Alternative Parts (Cross-Reference): IGW75N60H3; STGWA60NC60WDR; STGWA80H65DFB; FGH75N60UFTU;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 450

Buy Now Datasheet
Singapore, Singapore
600V 75A IGBT Transistor
279-FGH75N60UFTU
600V 75A IGBT Transistor 279-FGH75N60UFTU
IGBT, 600V, 75A, Field Stop, 450-TUBE Product overview: FGH75N60UFTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75N60UFTU can be used for catalog matching and distributor lookup.

IGBT, 600V, 75A, Field Stop, 450-TUBE Product overview: FGH75N60UFTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 75A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 75A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH75N60UFTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single IGBTs - FGH75N60UFTU-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
FGH75N60UFTU-ND
Single IGBTs FGH75N60UFTU-ND
IGBT Field Stop 600V 150A 452W Through Hole TO-247-3

IGBT Field Stop 600V 150A 452W Through Hole TO-247-3

Buy Now Datasheet
Single IGBTs - FGH75N60UFTU - ODG (Origin Data Global)
Shenzhen, China
Single IGBTs
FGH75N60UFTU
Single IGBTs FGH75N60UFTU
IGBT 600V 150A 452W TO247

IGBT 600V 150A 452W TO247

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Transistors
FGH75N60UFTU
IGBT Transistors FGH75N60UFTU
IGBT Transistors N-CH / 600V 75A FS Planar

IGBT Transistors N-CH / 600V 75A FS Planar

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGH75N60UFTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGH75N60UFTU
Discrete Semiconductor Products - Transistors - IGBTs FGH75N60UFTU
IGBT 600V 150A 452W TO247

IGBT 600V 150A 452W TO247

Supplier's Site
Igbt,n Channel,fast,600V,150A,to247; Continuous Collector Current Onsemi - 41T0518 - Newark, An Avnet Company
Chicago, IL, United States
Igbt,n Channel,fast,600V,150A,to247; Continuous Collector Current Onsemi
41T0518
Igbt,n Channel,fast,600V,150A,to247; Continuous Collector Current Onsemi 41T0518
IGBT,N CHANNEL,FAST,600V,15 0A,TO247; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:600V; Power Dissipation:452W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

IGBT,N CHANNEL,FAST,600V,150A,TO247; Continuous Collector Current:150A; Collector Emitter Saturation Voltage:600V; Power Dissipation:452W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 040293-FGH75N60UFTU 279-FGH75N60UFTU FGH75N60UFTU-ND FGH75N60UFTU FGH75N60UFTU FGH75N60UFTU 41T0518
Product Name IGBTs - Single - FGH75N60UFTU 600V 75A IGBT Transistor Single IGBTs Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs Igbt,n Channel,fast,600V,150A,to247; Continuous Collector Current Onsemi
VCE(on) 2.4 volts
PD 452000 milliwatts 452000 milliwatts 452000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) ? to 150 C (? to 302 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-247; TO-247-3 TO-3
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