onsemi IGBTs - Single - FGH40T65SHDF FGH40T65SHDF

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204180-FGH40T65SHDF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 101ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 68nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 268W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 1.81V @ 15V, 40A Total Switching Energy(Ets): 1.22mJ (on), 440μJ (off) Turn-on and Turn-off delay time: 18ns/64ns Testing Conditions: 400V, 40A, 6 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204180-FGH40T65SHDF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 101ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 68nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 268W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 1.81V @ 15V, 40A Total Switching Energy(Ets): 1.22mJ (on), 440μJ (off) Turn-on and Turn-off delay time: 18ns/64ns Testing Conditions: 400V, 40A, 6 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
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Suppliers

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IGBTs - Single - FGH40T65SHDF - 204180-FGH40T65SHDF - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGH40T65SHDF
204180-FGH40T65SHDF
IGBTs - Single - FGH40T65SHDF 204180-FGH40T65SHDF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204180-FGH40T65SHDF Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 101ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 68nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247-3 Maximum Current Collector: 80A VCEO Maximum Collector-Emitter Breakdown Voltage: 650V Maximum Power Dissipation: 268W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 1.81V @ 15V, 40A Total Switching Energy(Ets): 1.22mJ (on), 440μJ (off) Turn-on and Turn-off delay time: 18ns/64ns Testing Conditions: 400V, 40A, 6 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204180-FGH40T65SHDF
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 101ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 68nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Maximum Current Collector: 80A
VCEO Maximum Collector-Emitter Breakdown Voltage: 650V
Maximum Power Dissipation: 268W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 1.81V @ 15V, 40A
Total Switching Energy(Ets): 1.22mJ (on), 440μJ (off)
Turn-on and Turn-off delay time: 18ns/64ns
Testing Conditions: 400V, 40A, 6 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 204180-FGH40T65SHDF
Product Name IGBTs - Single - FGH40T65SHDF
VCE(on) 1.81 volts
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