Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038664-FGH30N60LSDT
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 35ns
Input Type: Standard
Gate Charge: 225nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 480W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 1.4V @ 15V, 30A
Total Switching Energy(Ets): 1.1mJ (on), 21mJ (off)
Turn-on and Turn-off delay time: 18ns/250ns
Testing Conditions: 400V, 30A, 6.8 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
Quantity per package: 450
600V 60A IGBT Transistor, TO-247, Through Hole Product overview: FGH30N60LSDTU from onsemi is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 60A. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, Through-Hole, 600V, 60A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGH30N60LSDTU can be used for catalog matching and distributor lookup.
IGBT 600V 60A 480W TO247
IGBT 600V 60A TO247-3
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FGH30N60LSDTU | 1038664-FGH30N60LSDTU | 279-FGH30N60LSDTU | 598-FGH30N60LSDTU | FGH30N60LSDTU | FGH30N60LSDTU |
| Product Name | Single IGBTs | IGBTs - Single - FGH30N60LSDTU | Through-Hole 600V 60A IGBT Transistor | IGBT 600V 60A 480W TO247 | IGBT Transistors | Discrete Semiconductor Products - Transistors - IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247 | ||||
| VCE(on) | 1.4 volts | 600 volts | ||||
| PD | 480000 milliwatts | 480000 milliwatts | 480000 milliwatts | |||
| Packing Method | Rail; Tube; Tube/Rail | Tube; Tube | Tube; Tube |
