onsemi IGBTs - Single - FGB30N6S2DT FGB30N6S2DT

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067187-FGB30N6S2DT
Packaging: Reel - TR
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 46ns
Input Type: Standard
Gate Charge: 23nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263AB
Maximum Current Collector: 45A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 167W
Pulsed Collector Current: 108A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 12A
Total Switching Energy(Ets): 55μJ (on), 100μJ (off)
Turn-on and Turn-off delay time: 6ns/40ns
Testing Conditions: 390V, 12A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

IGBT 600V 45A 167W TO263AB Product overview: FGB30N6S2DT from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 45A, 167W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 45A, 167W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGB30N6S2DT can be used for catalog matching and distributor lookup.