onsemi IGBTs - Single - FGA70N33BTD FGA70N33BTD

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040289-FGA70N33BTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 23ns IGBT Type: Trench Input Type: Standard Gate Charge: 49nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P VCEO Maximum Collector-Emitter Breakdown Voltage: 330V Maximum Power Dissipation: 149W Pulsed Collector Current: 220A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 70A Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
  • IGBTs - Single - FGA70N33BTD - 040289-FGA70N33BTD - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040289-FGA70N33BTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 23ns IGBT Type: Trench Input Type: Standard Gate Charge: 49nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P VCEO Maximum Collector-Emitter Breakdown Voltage: 330V Maximum Power Dissipation: 149W Pulsed Collector Current: 220A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 70A Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA70N33BTD - 040289-FGA70N33BTD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA70N33BTD
040289-FGA70N33BTD
IGBTs - Single - FGA70N33BTD 040289-FGA70N33BTD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040289-FGA70N33BTD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 23ns IGBT Type: Trench Input Type: Standard Gate Charge: 49nC Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P VCEO Maximum Collector-Emitter Breakdown Voltage: 330V Maximum Power Dissipation: 149W Pulsed Collector Current: 220A Collector-emitter saturation voltage(Max): 1.7V @ 15V, 70A Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040289-FGA70N33BTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 23ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 49nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
VCEO Maximum Collector-Emitter Breakdown Voltage: 330V
Maximum Power Dissipation: 149W
Pulsed Collector Current: 220A
Collector-emitter saturation voltage(Max): 1.7V @ 15V, 70A
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 040289-FGA70N33BTD
Product Name IGBTs - Single - FGA70N33BTD
VCE(on) 1.7 volts
Unlock Full Specs
to access all available technical data