IGBT 330V 149W TO3P Product overview: FGA70N33BTD from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 330V, 149W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 330V, 149W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA70N33BTD can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040289-FGA70N33BTD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 23ns
IGBT Type: Trench
Input Type: Standard
Gate Charge: 49nC
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
VCEO Maximum Collector-Emitter Breakdown Voltage: 330V
Maximum Power Dissipation: 149W
Pulsed Collector Current: 220A
Collector-emitter saturation voltage(Max): 1.7V @ 15V, 70A
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-FGA70N33BTD | 040289-FGA70N33BTD |
| Product Name | 330V 149W IGBT Transistor | IGBTs - Single - FGA70N33BTD |
| PD | 149000 milliwatts | 149000 milliwatts |
