onsemi IGBTs - Single - FGA60N60UFD FGA60N60UFD

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040286-FGA60N60UFD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 47ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 188nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 120A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 298W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 60A Total Switching Energy(Ets): 1.81mJ (on), 810μJ (off) Turn-on and Turn-off delay time: 23ns/130ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040286-FGA60N60UFD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 47ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 188nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 120A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 298W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 60A Total Switching Energy(Ets): 1.81mJ (on), 810μJ (off) Turn-on and Turn-off delay time: 23ns/130ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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IGBTs - Single - FGA60N60UFD - 040286-FGA60N60UFD - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA60N60UFD
040286-FGA60N60UFD
IGBTs - Single - FGA60N60UFD 040286-FGA60N60UFD
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040286-FGA60N60UFD Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 47ns IGBT Type: Field Stop Input Type: Standard Gate Charge: 188nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 120A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 298W Pulsed Collector Current: 180A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 60A Total Switching Energy(Ets): 1.81mJ (on), 810μJ (off) Turn-on and Turn-off delay time: 23ns/130ns Testing Conditions: 400V, 60A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040286-FGA60N60UFD
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 47ns
IGBT Type: Field Stop
Input Type: Standard
Gate Charge: 188nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 120A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 180A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 60A
Total Switching Energy(Ets): 1.81mJ (on), 810μJ (off)
Turn-on and Turn-off delay time: 23ns/130ns
Testing Conditions: 400V, 60A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
600V 120A 298W IGBT Transistor
279-FGA60N60UFD
600V 120A 298W IGBT Transistor 279-FGA60N60UFD
IGBT 600V 120A 298W TO3P Product overview: FGA60N60UFD from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 120A, 298W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 120A, 298W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA60N60UFD can be used for catalog matching and distributor lookup.

IGBT 600V 120A 298W TO3P Product overview: FGA60N60UFD from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 120A, 298W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 120A, 298W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-FGA60N60UFD can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 040286-FGA60N60UFD 279-FGA60N60UFD
Product Name IGBTs - Single - FGA60N60UFD 600V 120A 298W IGBT Transistor
VCE(on) 2.4 volts
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