onsemi IGBTs - Single - FGA30N60LSDTU FGA30N60LSDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040283-FGA30N60LSDTU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 35ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 480W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 1.4V @ 15V, 30A Total Switching Energy(Ets): 1.1mJ (on), 21mJ (off) Turn-on and Turn-off delay time: 18ns/250ns Testing Conditions: 400V, 30A, 6.8 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
  • IGBTs - Single - FGA30N60LSDTU - 040283-FGA30N60LSDTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - FGA30N60LSDTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040283-FGA30N60LSDTU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 35ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 480W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 1.4V @ 15V, 30A Total Switching Energy(Ets): 1.1mJ (on), 21mJ (off) Turn-on and Turn-off delay time: 18ns/250ns Testing Conditions: 400V, 30A, 6.8 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - FGA30N60LSDTU - 040283-FGA30N60LSDTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - FGA30N60LSDTU
040283-FGA30N60LSDTU
IGBTs - Single - FGA30N60LSDTU 040283-FGA30N60LSDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040283-FGA30N60LSDTU Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 35ns IGBT Type: Trench Field Stop Input Type: Standard Gate Charge: 225nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 480W Pulsed Collector Current: 90A Collector-emitter saturation voltage(Max): 1.4V @ 15V, 30A Total Switching Energy(Ets): 1.1mJ (on), 21mJ (off) Turn-on and Turn-off delay time: 18ns/250ns Testing Conditions: 400V, 30A, 6.8 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040283-FGA30N60LSDTU
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 35ns
IGBT Type: Trench Field Stop
Input Type: Standard
Gate Charge: 225nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 480W
Pulsed Collector Current: 90A
Collector-emitter saturation voltage(Max): 1.4V @ 15V, 30A
Total Switching Energy(Ets): 1.1mJ (on), 21mJ (off)
Turn-on and Turn-off delay time: 18ns/250ns
Testing Conditions: 400V, 30A, 6.8 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - FGA30N60LSDTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
FGA30N60LSDTU
Discrete Semiconductor Products - Transistors - IGBTs FGA30N60LSDTU
IGBT TRENCH/FS 600V 60A TO3P

IGBT TRENCH/FS 600V 60A TO3P

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
FGA30N60LSDTU
IGBT Transistors FGA30N60LSDTU
IGBT Transistors 30A 600V N-Ch Planar

IGBT Transistors 30A 600V N-Ch Planar

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 040283-FGA30N60LSDTU FGA30N60LSDTU FGA30N60LSDTU
Product Name IGBTs - Single - FGA30N60LSDTU Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
VCE(on) 1.4 volts
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