onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P FDZ299P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204139-FDZ299P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 9-BGA (1.5x1.6) Dimension: 9-WFBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 742pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204139-FDZ299P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 9-BGA (1.5x1.6) Dimension: 9-WFBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 742pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P - 204139-FDZ299P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P
204139-FDZ299P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P 204139-FDZ299P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204139-FDZ299P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 9-BGA (1.5x1.6) Dimension: 9-WFBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 742pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204139-FDZ299P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 9-BGA (1.5x1.6)
Dimension: 9-WFBGA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 742pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDZ299P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDZ299P
MOSFET P-CH 20V 4.6A 9BGA

MOSFET P-CH 20V 4.6A 9BGA

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204139-FDZ299P FDZ299P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 1700 milliwatts
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