onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P FDZ299P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204139-FDZ299P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 9-BGA (1.5x1.6) Dimension: 9-WFBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 742pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204139-FDZ299P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 9-BGA (1.5x1.6) Dimension: 9-WFBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 742pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P - 204139-FDZ299P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P
204139-FDZ299P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P 204139-FDZ299P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204139-FDZ299P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.7W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 9-BGA (1.5x1.6) Dimension: 9-WFBGA Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.6A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 9nC @ 4.5V Max Input Capacitance: 742pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204139-FDZ299P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.7W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 9-BGA (1.5x1.6)
Dimension: 9-WFBGA
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 742pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 55 mOhm @ 4.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
20V 4.6A BGA MOSFET Transistor - 278-FDZ299P - ERSAELECTRONICS PTE. LTD.
Singapore
20V 4.6A BGA MOSFET Transistor
278-FDZ299P
20V 4.6A BGA MOSFET Transistor 278-FDZ299P
MOSFET P-CH 20V 4.6A BGA Product overview: FDZ299P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, BGA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDZ299P can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 4.6A BGA Product overview: FDZ299P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, BGA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDZ299P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDZ299P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDZ299P
MOSFET P-CH 20V 4.6A 9BGA

MOSFET P-CH 20V 4.6A 9BGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 204139-FDZ299P 278-FDZ299P FDZ299P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDZ299P 20V 4.6A BGA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 1700 milliwatts 1700 milliwatts
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