MOSFET P-CH 20V 830MA SC89-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 127200-FDY102PZ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 830mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.1nC @ 4.5V
Max Input Capacitance: 135pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 500 mOhm @ 830mA, 4.5V
Alternative Parts (Cross-Reference): SI1303DL-T1-E3; RTF010P02TR; RTF010P02; FDY102PZ;
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
MOSFETs -20V Sngle PCh -1.5V Specified PowerTrnc Product overview: FDY102PZ from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -1.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -1.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDY102PZ can be used for catalog matching and distributor lookup.
P-Channel 20V 830mA (Ta) 625mW (Ta) Surface Mount SC-89-3
P-Channel 20V 830mA (Ta) 625mW (Ta) Surface Mount SC-89-3
P-Channel 20V 830mA (Ta) 625mW (Ta) Surface Mount SC-89-3
MOSFET P-CH 20V 830MA SC89-3
MOSFET, P CH, -20V, -0.83A, SC-89-3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:830mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
MOSFET -20V Sngle PCh -1.5V Specified PowerTrnch
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDY102PZ | 127200-FDY102PZ | 2088-FDY102PZ | FDY102PZTR-ND | FDY102PZ | 31Y1416 | FDY102PZ |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDY102PZ | -20V -1.5V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Ch, -20V, -0.83A, Sc-89-3; Channel Type Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 830 milliamps | 830 milliamps | |||||
| PD | 625 milliwatts | 625 milliwatts | 625 milliwatts |