onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW262P FDW262P

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067127-FDW262P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1193pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 47 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067127-FDW262P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1193pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 47 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW262P - 067127-FDW262P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW262P
067127-FDW262P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW262P 067127-FDW262P
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 067127-FDW262P Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.3W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-TSSOP Dimension: 8-TSSOP (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1193pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 47 mOhm @ 4.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067127-FDW262P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-TSSOP
Dimension: 8-TSSOP (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1193pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 47 mOhm @ 4.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - FDW262P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDW262P-ND
Single FETs, MOSFETs FDW262P-ND
P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP

P-Channel 20V 4.5A (Ta) 1.3W (Ta) Surface Mount 8-TSSOP

Buy Now Datasheet
Single FETs, MOSFETs - FDW262P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDW262P
Single FETs, MOSFETs FDW262P
MOSFET P-CH 20V 4.5A 8TSSOP

MOSFET P-CH 20V 4.5A 8TSSOP

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDW262P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDW262P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDW262P
MOSFET P-CH 20V 4.5A 8TSSOP

MOSFET P-CH 20V 4.5A 8TSSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 067127-FDW262P FDW262P-ND FDW262P FDW262P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDW262P Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 20 volts 20 volts
PD 1300 milliwatts 1300 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data