P-Channel JFET, -25V, -120mA, 10 Ohm, SOT-23 Product overview: FDV302P from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -25V, -120mA, 10 Ohm, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -25V, -120mA, 10 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDV302P can be used for catalog matching and distributor lookup.
MOSFET P-CH 25V 120MA SOT23
SMALL SIGNAL FIELD-EFFECT TRANSI
P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016219-FDV302P
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 350mW (Ta)
Family Name: FDV302P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 120mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 0.31nC @ 4.5V
Max Input Capacitance: 11pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 10 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): FDV302P_Q; FDV302P_D87Z; FDV302P_NL;
Introduction Date: October 30, 1997
ECCN: EAR99
Country of Origin: Ireland, Israel, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Industrial, Power Management
MOSFET P-CH 25V 120MA SOT23
P CHANNEL MOSFET, -25V, 120mA, SOT-23; Channel Type:P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
PCHMOSFET, -25V, 120mA, SOT-23, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDV302P | FDV302P | FDV302PTR-ND | 016219-FDV302P | FDV302P | 58K1479 | 67R2087 | FDV302P |
| Product Name | P-Channel -25V -120mA 10 Ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDV302P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -25V, 120Ma, Sot-23; Channel Type Onsemi | Pchmosfet, -25V, 120Ma, Sot-23, Full Reel; Channel Type Onsemi | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | |||
| PD | 350 milliwatts | 350 milliwatts | 350 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |