onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8770 FDU8770

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038483-FDU8770 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 3720pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8770 - 1038483-FDU8770 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU8770 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038483-FDU8770 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 3720pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8770 - 1038483-FDU8770 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8770
1038483-FDU8770
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8770 1038483-FDU8770
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1038483-FDU8770 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 115W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: IPAK (TO-251) Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 73nC @ 10V Max Input Capacitance: 3720pF @ 13V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 mOhm @ 35A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038483-FDU8770
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: IPAK (TO-251)
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 3720pF @ 13V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 mOhm @ 35A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDU8770 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDU8770
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDU8770
MOSFET N-CH 25V 35A IPAK

MOSFET N-CH 25V 35A IPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1038483-FDU8770 FDU8770
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU8770 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 25 volts
PD 115000 milliwatts
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