onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6680AQ FDU6680AQ

Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059002-FDU6680AQ Mounting: SMD (SMT) Power Dissipation: 2.8 W Rise Time: 9 ns Fall Time: 13 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-251 Alternative Parts (Cross-Reference): FDU6680AQFDU6680A_Q; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 56 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 31 ns Drain to Source Resistance: 9.5 mΩ Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059002-FDU6680AQ Mounting: SMD (SMT) Power Dissipation: 2.8 W Rise Time: 9 ns Fall Time: 13 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-251 Alternative Parts (Cross-Reference): FDU6680AQFDU6680A_Q; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 56 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 31 ns Drain to Source Resistance: 9.5 mΩ Gate to Source Voltage (Vgs): 20 V
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6680AQ - 1059002-FDU6680AQ - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6680AQ
1059002-FDU6680AQ
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6680AQ 1059002-FDU6680AQ
Manufacturer: Fairchild/ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1059002-FDU6680AQ Mounting: SMD (SMT) Power Dissipation: 2.8 W Rise Time: 9 ns Fall Time: 13 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-251 Alternative Parts (Cross-Reference): FDU6680AQFDU6680A_Q; Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 175 °C RoHS: Non-Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 56 A Drain to Source Breakdown Voltage: 30 V Turn-Off Delay Time: 31 ns Drain to Source Resistance: 9.5 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Fairchild/ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1059002-FDU6680AQ
Mounting: SMD (SMT)
Power Dissipation: 2.8 W
Rise Time: 9 ns
Fall Time: 13 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-251
Alternative Parts (Cross-Reference): FDU6680AQFDU6680A_Q;
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 56 A
Drain to Source Breakdown Voltage: 30 V
Turn-Off Delay Time: 31 ns
Drain to Source Resistance: 9.5 mΩ
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1059002-FDU6680AQ
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDU6680AQ
Package Type SOT3; TO-251
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