Manufacturer: onsemi
Win Source Part Number: 1323921-FDT4N50NZU
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 4,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Supplier Device Package: SOT-223 (TO-261)
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 25 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-261-4, TO-261AA
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-FDT4N50NZUDKR,48
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
POWER MOSFET, N-CHANNEL, UNIFETI
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
MOSFET, N-CH, 500V, 2A, SOT-223 ROHS COMPLIANT: YES
POWER MOSFET, N-CHANNEL, UNIFETI
| RS Components, Ltd. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2296326 | 1323921-FDT4N50NZU | FDT4N50NZU | 488-FDT4N50NZUDKR-ND | 50AJ3067 | FDT4N50NZU |
| Product Name | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 500V, 2A, Sot-223 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | SOT223; SOT-223 | SOT3; TO-261-4, TO-261AA | SOT223; TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-3; SOT223 | TO-261-4, TO-261AA |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| QG | 9.1 nC | |||||
| PD | 2000 milliwatts | 2000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
