POWER MOSFET, N-CHANNEL, UNIFETI
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
N-Channel 500V 2A (Tc) 2W (Tc) Surface Mount SOT-223 (TO-261)
Manufacturer: onsemi
Win Source Part Number: 1323921-FDT4N50NZU
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 4,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Supplier Device Package: SOT-223 (TO-261)
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 25 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-261-4, TO-261AA
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 488-FDT4N50NZUDKR,48
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
POWER MOSFET, N-CHANNEL, UNIFETI Product overview: FDT4N50NZU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDT4N50NZU can be used for catalog matching and distributor lookup.
MOSFET, N-CH, 500V, 2A, SOT-223 ROHS COMPLIANT: YES
POWER MOSFET, N-CHANNEL, UNIFETI
| ODG (Origin Data Global) | RS Components, Ltd. | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDT4N50NZU | 2296326 | 488-FDT4N50NZUDKR-ND | 1323921-FDT4N50NZU | 278-FDT4N50NZU | 50AJ3067 | FDT4N50NZU |
| Product Name | Single FETs, MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | N-Channel MOSFET Transistor | Mosfet, N-Ch, 500V, 2A, Sot-223 Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 500 volts | 500 volts | |||||
| IDSS | 2000 milliamps | ||||||
| PD | 2000 milliwatts | 2000 milliwatts | 2 milliwatts |