Mosfet Array 2 N-Channel (Dual) 20V 6.5A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 6.5A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 6.5A 900mW Surface Mount 8-SOIC
MOSFETs SO-8 SGL N-CH 2.5V Product overview: FDS9926A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.5V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.5V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS9926A can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 6.5A 8SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 007652-FDS9926A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS9926A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 9nC @ 4.5V
Max Input Capacitance: 650pF @ 10V
Maximum Rds On at Id,Vgs: 30 mOhm @ 6.5A, 4.5V
Alternative Parts (Cross-Reference): TSM9926DCS; SI7904BDN-T1-GE3; Si7904BDN-T1-E3;
Introduction Date: February 18, 2000
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500
MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:2W RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.025ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:2W RoHS Compliant: Yes
Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V RoHS Compliant: Yes
MOSFET 2N-CH 20V 6.5A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS9926ADKR-ND | 2088-FDS9926A | FDS9926A | 6710769 | 6710769P | 007652-FDS9926A | FDS9926A | 78K5951 | 58M6643 | FDS9926A |
| Product Name | FET, MOSFET Arrays | 2.5V MOSFET Transistor | FET, MOSFET Arrays | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS9926A | MOSFET | Mosfet, 20V, Soic; Transistor Polarity Onsemi | Dual Mosfet, Dual N Channel, 6.5 A, 20 V, 0.025 Ohm, 4.5 V, 1 V Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Reel | 8-SOIC (0.154", 3.90mm Width) | Soic | SOIC | SOT3; 8-SO | TO-3 | TO-3 | ||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| Transconductance | 0.0220 kS | |||||||||
| PD | 2 milliwatts | 900 milliwatts | 2000 milliwatts |
