onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8876 FDS8876

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016198-FDS8876 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1650pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016198-FDS8876 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1650pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8876 - 016198-FDS8876 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8876
016198-FDS8876
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8876 016198-FDS8876
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016198-FDS8876 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 1650pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 12.5A, 10V Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016198-FDS8876
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 1650pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
Application Field: Used in Computers & Computer Peripherals, Communications & Networking, Power Management
Quantity per package: 2,500

Buy Now Datasheet
Singapore, Singapore
N-Channel SMD 30V 12.5A MOSFET Transistor
278-FDS8876
N-Channel SMD 30V 12.5A MOSFET Transistor 278-FDS8876
N-Channel MOSFET 30V 12.5A 8.2mR SOIC Surface Mount Product overview: FDS8876 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 12.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 12.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS8876 can be used for catalog matching and distributor lookup.

N-Channel MOSFET 30V 12.5A 8.2mR SOIC Surface Mount Product overview: FDS8876 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 30V, 12.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 12.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS8876 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - FDS8876TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FDS8876TR-ND
Single FETs, MOSFETs FDS8876TR-ND
N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

N-Channel 30V 12.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET
FDS8876
MOSFET FDS8876
MOSFET 30V 12.5A 8.2 OHMS NCH

MOSFET 30V 12.5A 8.2 OHMS NCH

Buy Now Datasheet
Single FETs, MOSFETs - FDS8876 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS8876
Single FETs, MOSFETs FDS8876
MOSFET N-CH 30V 12.5A 8SOIC

MOSFET N-CH 30V 12.5A 8SOIC

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS8876 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS8876
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS8876
MOSFET N-CH 30V 12.5A 8SOIC

MOSFET N-CH 30V 12.5A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 016198-FDS8876 278-FDS8876 FDS8876TR-ND FDS8876 FDS8876 FDS8876
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS8876 N-Channel SMD 30V 12.5A MOSFET Transistor Single FETs, MOSFETs MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 2500 milliwatts 2500 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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