Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016181-FDS6961A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6961A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4nC @ 5V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): PHN210T,118; PHN210T; PHN210,118; PHN210T/R;
Introduction Date: April 27, 1999
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 900mW Surface Mount 8-SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET 2N-CH 30V 3.5A 8SOIC
MOSFET 2N-CH 30V 3.5A 8SOIC
DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016181-FDS6961A | FDS6961ATR-ND | FDS6961A | FDS6961A | FDS6961A | FDS6961A | 72K8459 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6961A | FET, MOSFET Arrays | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| PD | 900 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
