onsemi FET, MOSFET Arrays FDS6961A

Description
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 900mW Surface Mount 8-SOIC
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Description
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 900mW Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FDS6961ATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS6961ATR-ND
FET, MOSFET Arrays FDS6961ATR-ND
Mosfet Array 2 N-Channel (Dual) 30V 3.5A 900mW Surface Mount 8-SOIC

Mosfet Array 2 N-Channel (Dual) 30V 3.5A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS6961A - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6961A
FET, MOSFET Arrays FDS6961A
SMALL SIGNAL FIELD-EFFECT TRANSI

SMALL SIGNAL FIELD-EFFECT TRANSI

Supplier's Site Datasheet
FET, MOSFET Arrays - FDS6961A - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS6961A
FET, MOSFET Arrays FDS6961A
MOSFET 2N-CH 30V 3.5A 8SOIC

MOSFET 2N-CH 30V 3.5A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6961A - 016181-FDS6961A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6961A
016181-FDS6961A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6961A 016181-FDS6961A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016181-FDS6961A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FDS6961A Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.5A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 4nC @ 5V Max Input Capacitance: 220pF @ 15V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): PHN210T,118; PHN210T; PHN210,118; PHN210T/R; Introduction Date: April 27, 1999 ECCN: EAR99 Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016181-FDS6961A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FDS6961A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 4nC @ 5V
Max Input Capacitance: 220pF @ 15V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): PHN210T,118; PHN210T; PHN210,118; PHN210T/R;
Introduction Date: April 27, 1999
ECCN: EAR99
Country of Origin: China, Malaysia, Philippines, Taiwan, Thailand
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi - 72K8459 - Newark, An Avnet Company
Chicago, IL, United States
Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi
72K8459
Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi 72K8459
DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

DUAL N CHANNEL MOSFET, 30V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.5A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6961A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6961A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6961A
MOSFET 2N-CH 30V 3.5A 8SOIC

MOSFET 2N-CH 30V 3.5A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS6961A
MOSFET FDS6961A
MOSFET SO-8 DUAL N-CH

MOSFET SO-8 DUAL N-CH

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Technical Specifications

  DigiKey ODG (Origin Data Global) ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6961ATR-ND FDS6961A FDS6961A 016181-FDS6961A 72K8459 FDS6961A FDS6961A
Product Name FET, MOSFET Arrays FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6961A Dual N Channel Mosfet, 30V, Soic; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SO TO-3
Polarity N-Channel; 2 N-Channel (Dual) N-Channel; 2 N-Channel (Dual) N-Channel N-Channel
V(BR)DSS 30 volts 30 volts 30 volts
IDSS 3500 milliamps 3500 milliamps 3500 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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