Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC
Dual N-Ch MOSFET 20V 7.5A 13mR SOIC SM Product overview: FDS6911 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 7.5A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 7.5A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6911 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 7.5A 8SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1038409-FDS6911
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 10V
Max Input Capacitance: 1130pF @ 15V
Maximum Rds On at Id,Vgs: 13 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 20V 7.5A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | FDS6911TR-ND | 289-FDS6911 | FDS6911 | 1038409-FDS6911 | 67P3488 | FDS6911 | FDS6911 |
| Product Name | FET, MOSFET Arrays | Dual 20V 7.5A SOIC MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6911 | N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | TO-3 | |||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| PD | 900 milliwatts | 900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
