Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 20V 9.4A 8SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016174-FDS6898A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.4A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1821pF @ 10V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 9.4A 8SOIC
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20V 9.4A 900mW 14mΩ@9.4A,4.5V 1.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.4A; On Resistance Rds(on):0.01ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.4A; On Resistance Rds(on):0.01ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:2W RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6898ATR-ND | FDS6898A | 016174-FDS6898A | FDS6898A | FDS6898A | FDS6898A | FDS6898A | 82C2573 | 54K3604 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6898A | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N-CHANNEL, Si, POWER, MOSFET, SO8 | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | SO-8 | TO-3 | TO-3 | |||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||
| IDSS | 9400 milliamps | 9400 milliamps | 9400 milliamps |
