MOSFETs SO-8 Product overview: FDS6898A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6898A can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 9.4A 900mW Surface Mount 8-SOIC
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016174-FDS6898A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 9.4A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 1821pF @ 10V
Maximum Rds On at Id,Vgs: 14 mOhm @ 9.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 9.4A 8SOIC
MOSFET 2N-CH 20V 9.4A 8SOIC
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DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.4A; On Resistance Rds(on):0.01ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.4A; On Resistance Rds(on):0.01ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:2W RoHS Compliant: Yes
20V 9.4A 900mW 14mΩ@9.4A,4.5V 1.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Karl Kruse GmbH & Co. KG | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDS6898A | FDS6898ATR-ND | 016174-FDS6898A | FDS6898A | FDS6898A | FDS6898A | FDS6898A | 82C2573 | 54K3604 | FDS6898A |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6898A | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | N-CHANNEL, Si, POWER, MOSFET, SO8 | Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi | Mosfet, Full Reel; Transistor Polarity Onsemi | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||||
| Transconductance | 0.0470 kS | |||||||||
| PD | 2 milliwatts | 900 milliwatts | 2000 milliwatts | 900 milliwatts | ||||||
| Package Type | Reel | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | SO-8 | TO-3 | TO-3 |
