MOSFETs SO-8 DUAL N-CH 20V Product overview: FDS6890A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS6890A can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 7.5A 8SOIC
POWER FIELD-EFFECT TRANSISTOR, 7
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016172-FDS6890A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 7.5A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 32nC @ 4.5V
Max Input Capacitance: 2130pF @ 10V
Maximum Rds On at Id,Vgs: 18 mOhm @ 7.5A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 20V 7.5A 900mW Surface Mount 8-SOIC
MOSFET, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation Pd:2W RoHS Compliant: Yes
DUAL N CHANNEL MOSFET, 20V, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:7.5A; On Resistance Rds(on):0.013ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-FDS6890A | FDS6890A | FDS6890A | 016172-FDS6890A | FDS6890ATR-ND | 67R2078 | 78K5950 | FDS6890A |
| Product Name | Dual 20V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6890A | FET, MOSFET Arrays | Mosfet, Full Reel; Transistor Polarity Onsemi | Dual N Channel Mosfet, 20V, Soic; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| Transconductance | 0.0350 kS | |||||||
| PD | 2 milliwatts | 900 milliwatts | 2000 milliwatts | |||||
| Package Type | Reel | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 | TO-3 |
