onsemi N-Channel Dual 20V 6.7A MOSFET Transistor FDS6812A

20V N-Channel Dual MOSFET SOIC, 6.7A, 22mR Rds(on) Product overview: FDS6812A from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 20V, 6.7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 6.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS6812A can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204128-FDS6812A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1082pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial

Mosfet Array 2 N-Channel (Dual) 20V 6.7A 900mW Surface Mount 8-SOIC