Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204128-FDS6812A
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.7A
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 19nC @ 4.5V
Max Input Capacitance: 1082pF @ 10V
Maximum Rds On at Id,Vgs: 22 mOhm @ 6.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Industrial
Mosfet Array 2 N-Channel (Dual) 20V 6.7A 900mW Surface Mount 8-SOIC
MOSFET 2N-CH 20V 6.7A 8SOIC
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 204128-FDS6812A | FDS6812A-ND | FDS6812A |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6812A | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| V(BR)DSS | 20 volts | ||
| PD | 900 milliwatts |
