onsemi Single FETs, MOSFETs FDS6682

Description
MOSFET N-CH 30V 14A 8SOIC
Request a Quote Datasheet
Description
MOSFET N-CH 30V 14A 8SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FDS6682 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
FDS6682
Single FETs, MOSFETs FDS6682
MOSFET N-CH 30V 14A 8SOIC

MOSFET N-CH 30V 14A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6682 - 016167-FDS6682 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6682
016167-FDS6682
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6682 016167-FDS6682
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016167-FDS6682 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Family Name: FDS6682 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 14A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 31nC @ 5V Max Input Capacitance: 2310pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.5 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): Si4874DY-E3; TSM4872CS RL; IRF7821PbF; IRF7821GPBF; Introduction Date: December 20, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016167-FDS6682
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Family Name: FDS6682
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 14A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 31nC @ 5V
Max Input Capacitance: 2310pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): Si4874DY-E3; TSM4872CS RL; IRF7821PbF; IRF7821GPBF;
Introduction Date: December 20, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - 488-FDS6682TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-FDS6682TR-ND
Single FETs, MOSFETs 488-FDS6682TR-ND
MOSFET N-CH 30V 14A 8SOIC

MOSFET N-CH 30V 14A 8SOIC

Buy Now Datasheet
N Channel Mosfet, 30V, 14A, Soic, Full Reel; Channel Type Onsemi - 78K5946 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 14A, Soic, Full Reel; Channel Type Onsemi
78K5946
N Channel Mosfet, 30V, 14A, Soic, Full Reel; Channel Type Onsemi 78K5946
N CHANNEL MOSFET, 30V, 14A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 14A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS6682 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS6682
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS6682
MOSFET N-CH 30V 14A 8SOIC

MOSFET N-CH 30V 14A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
FDS6682
MOSFET FDS6682
MOSFET SO-8

MOSFET SO-8

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDS6682 016167-FDS6682 488-FDS6682TR-ND 78K5946 FDS6682 FDS6682
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6682 Single FETs, MOSFETs N Channel Mosfet, 30V, 14A, Soic, Full Reel; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 14000 milliamps 14000 milliamps
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