MOSFET N-CH 30V 8.4A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016157-FDS6612A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.6nC @ 5V
Max Input Capacitance: 560pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 30V 8.4A 8SOIC
N CHANNEL MOSFET, 30V, 8.4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.4A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 8.4A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS6612A | 016157-FDS6612A | FDS6612ADKR-ND | FDS6612A | FDS6612A | 78K5938 | 58M6636 | 29X6696 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6612A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 30V, 8.4A, Soic; Transistor Polarity Onsemi | Mosfet Transistor, N Channel, 8.4 A, 30 V, 0.019 Ohm, 10 V, 1.9 V Rohs Compliant Onsemi | Mosfet, N Channel, 30V, 8.4A, Soic-8; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| IDSS | 8400 milliamps | 8400 milliamps | 8400 milliamps | |||||
| PD | 2500 milliwatts | 2500 milliwatts |
