SMALL SIGNAL FIELD-EFFECT TRANSI Product overview: FDS6612A from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FDS6612A can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 8.4A 8SOIC
SMALL SIGNAL FIELD-EFFECT TRANSI
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016157-FDS6612A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 7.6nC @ 5V
Max Input Capacitance: 560pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 8.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 30V 8.4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N CHANNEL MOSFET, 30V, 8.4A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.4A; On Resistance Rds(on):0.019ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 8.4A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.9V RoHS Compliant: Yes
MOSFET N-CH 30V 8.4A 8SOIC
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-FDS6612A | FDS6612A | 016157-FDS6612A | FDS6612ADKR-ND | 78K5938 | 58M6636 | 29X6696 | FDS6612A | FDS6612A |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS6612A | Single FETs, MOSFETs | N Channel Mosfet, 30V, 8.4A, Soic; Transistor Polarity Onsemi | Mosfet Transistor, N Channel, 8.4 A, 30 V, 0.019 Ohm, 10 V, 1.9 V Rohs Compliant Onsemi | Mosfet, N Channel, 30V, 8.4A, Soic-8; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||||||
| Transconductance | 0.0300 kS | ||||||||
| PD | 2.5 milliwatts | 2500 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
