The FDS4897AC is a dual N- and P-Channel PowerTrench¬Æ MOSFET designed for efficient switching applications. The N-Channel MOSFET has a maximum drain-source voltage of 40 V, a continuous drain current rating of 6.1 A, and an on-resistance (Rds(on)) of 26 m,Ѷ at a gate-source voltage (Vgs) of 10 V. The P-Channel MOSFET features a maximum drain-source voltage of -40 V, a continuous drain current rating of -5.2 A, and an on-resistance of 39 m,Ѷ at Vgs of -10 V. This component is suitable for applications such as inverters and power supplies, and it is RoHS compliant. The device operates within a temperature range of -55¬8C to +150¬8C and is packaged in an 8-SO configuration with a maximum power dissipation of 900 mW. The FDS4897AC is also characterized by low gate charge and input capacitance, making it a viable option for high-efficiency designs.
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
Mosfet Array N and P-Channel 40V 6.1A, 5.2A 900mW Surface Mount 8-SOIC
Dual N/P-Ch MOSFET 40V 26mR SOIC 5.2A 2500/REEL Product overview: FDS4897AC from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 5.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 5.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4897AC can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 130189-FDS4897AC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.1A, 5.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 1055pF @ 20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
MOSFET N/P-CH 40V 6.1A 8SOIC
MOSFET, N & P-CH, 40V, 6.1A, SOIC-8; Transistor Polarity:Complementa
MOSFET 40V Dual N & P Chan PowerTrench
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS4897AC | FDS4897ACTR-ND | 289-FDS4897AC | 130189-FDS4897AC | FDS4897AC | 31Y1397 | FDS4897AC |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual 40V 5.2A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi | MOSFET |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| IDSS | 6100 milliamps | 6100 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
