onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC FDS4897AC

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 130189-FDS4897AC Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 6.1A, 5.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 1055pF @ 20V Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 130189-FDS4897AC Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 6.1A, 5.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 1055pF @ 20V Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500
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Datasheet
Datasheet Summary
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The FDS4897AC is a dual N- and P-Channel PowerTrench¬Æ MOSFET designed for efficient switching applications. The N-Channel MOSFET has a maximum drain-source voltage of 40 V, a continuous drain current rating of 6.1 A, and an on-resistance (Rds(on)) of 26 m,Ѷ at a gate-source voltage (Vgs) of 10 V. The P-Channel MOSFET features a maximum drain-source voltage of -40 V, a continuous drain current rating of -5.2 A, and an on-resistance of 39 m,Ѷ at Vgs of -10 V. This component is suitable for applications such as inverters and power supplies, and it is RoHS compliant. The device operates within a temperature range of -55¬8C to +150¬8C and is packaged in an 8-SO configuration with a maximum power dissipation of 900 mW. The FDS4897AC is also characterized by low gate charge and input capacitance, making it a viable option for high-efficiency designs.

Datasheet Summary
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The FDS4897AC is a dual N- and P-Channel PowerTrench¬Æ MOSFET designed for efficient switching applications. The N-Channel MOSFET has a maximum drain-source voltage of 40 V, a continuous drain current rating of 6.1 A, and an on-resistance (Rds(on)) of 26 m,Ѷ at a gate-source voltage (Vgs) of 10 V. The P-Channel MOSFET features a maximum drain-source voltage of -40 V, a continuous drain current rating of -5.2 A, and an on-resistance of 39 m,Ѷ at Vgs of -10 V. This component is suitable for applications such as inverters and power supplies, and it is RoHS compliant. The device operates within a temperature range of -55¬8C to +150¬8C and is packaged in an 8-SO configuration with a maximum power dissipation of 900 mW. The FDS4897AC is also characterized by low gate charge and input capacitance, making it a viable option for high-efficiency designs.

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC - 130189-FDS4897AC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC
130189-FDS4897AC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC 130189-FDS4897AC
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 130189-FDS4897AC Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 900mW Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 6.1A, 5.2A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 21nC @ 10V Max Input Capacitance: 1055pF @ 20V Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 130189-FDS4897AC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.1A, 5.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 1055pF @ 20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500

Buy Now Datasheet
FET, MOSFET Arrays - FDS4897ACTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
FDS4897ACTR-ND
FET, MOSFET Arrays FDS4897ACTR-ND
Mosfet Array N and P-Channel 40V 6.1A, 5.2A 900mW Surface Mount 8-SOIC

Mosfet Array N and P-Channel 40V 6.1A, 5.2A 900mW Surface Mount 8-SOIC

Buy Now Datasheet
FET, MOSFET Arrays - FDS4897AC - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FDS4897AC
FET, MOSFET Arrays FDS4897AC
MOSFET N/P-CH 40V 6.1A/5.2A 8SO

MOSFET N/P-CH 40V 6.1A/5.2A 8SO

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FDS4897AC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FDS4897AC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FDS4897AC
MOSFET N/P-CH 40V 6.1A 8SOIC

MOSFET N/P-CH 40V 6.1A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V Dual N & P Chan PowerTrench

MOSFET 40V Dual N & P Chan PowerTrench

Buy Now Datasheet
Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi - 31Y1397 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi
31Y1397
Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi 31Y1397
MOSFET, N & P-CH, 40V, 6.1A, SOIC-8; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.1A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

MOSFET, N & P-CH, 40V, 6.1A, SOIC-8; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6.1A; On Resistance Rds(on):0.02ohm; Transistor Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 130189-FDS4897AC FDS4897ACTR-ND FDS4897AC FDS4897AC FDS4897AC 31Y1397
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC FET, MOSFET Arrays FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi
Polarity P-Channel P-Channel; N and P-Channel
V(BR)DSS 40 volts 40 volts
PD 900 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; 8-SO "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) TO-3
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6 suppliers