The FDS4897AC is a dual N- and P-Channel PowerTrench¬Æ MOSFET designed for efficient switching applications. The N-Channel MOSFET has a maximum drain-source voltage of 40 V, a continuous drain current rating of 6.1 A, and an on-resistance (Rds(on)) of 26 m,Ѷ at a gate-source voltage (Vgs) of 10 V. The P-Channel MOSFET features a maximum drain-source voltage of -40 V, a continuous drain current rating of -5.2 A, and an on-resistance of 39 m,Ѷ at Vgs of -10 V. This component is suitable for applications such as inverters and power supplies, and it is RoHS compliant. The device operates within a temperature range of -55¬8C to +150¬8C and is packaged in an 8-SO configuration with a maximum power dissipation of 900 mW. The FDS4897AC is also characterized by low gate charge and input capacitance, making it a viable option for high-efficiency designs.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 130189-FDS4897AC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.1A, 5.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 1055pF @ 20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
Mosfet Array N and P-Channel 40V 6.1A, 5.2A 900mW Surface Mount 8-SOIC
MOSFET N/P-CH 40V 6.1A/5.2A 8SO
MOSFET 40V Dual N & P Chan PowerTrench
MOSFET, N & P-CH, 40V, 6.1A, SOIC-8; Transistor Polarity:Complementa
MOSFET N/P-CH 40V 6.1A 8SOIC
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 130189-FDS4897AC | FDS4897ACTR-ND | FDS4897AC | FDS4897AC | 31Y1397 | FDS4897AC |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; N and P-Channel | ||||
| V(BR)DSS | 40 volts | 40 volts | ||||
| PD | 900 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SO | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
