The FDS4897AC is a dual N- and P-Channel PowerTrench¬Æ MOSFET designed for efficient switching applications. The N-Channel MOSFET has a maximum drain-source voltage of 40 V, a continuous drain current rating of 6.1 A, and an on-resistance (Rds(on)) of 26 m,Ѷ at a gate-source voltage (Vgs) of 10 V. The P-Channel MOSFET features a maximum drain-source voltage of -40 V, a continuous drain current rating of -5.2 A, and an on-resistance of 39 m,Ѷ at Vgs of -10 V. This component is suitable for applications such as inverters and power supplies, and it is RoHS compliant. The device operates within a temperature range of -55¬8C to +150¬8C and is packaged in an 8-SO configuration with a maximum power dissipation of 900 mW. The FDS4897AC is also characterized by low gate charge and input capacitance, making it a viable option for high-efficiency designs.
Dual N/P-Ch MOSFET 40V 26mR SOIC 5.2A 2500/REEL Product overview: FDS4897AC from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 40V, 5.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 40V, 5.2A, SOIC, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FDS4897AC can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 130189-FDS4897AC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 900mW
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 6.1A, 5.2A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 1055pF @ 20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 6.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 2,500
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| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-FDS4897AC | 130189-FDS4897AC | FDS4897AC | FDS4897ACTR-ND | FDS4897AC | 31Y1397 | FDS4897AC |
| Product Name | Dual 40V 5.2A SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4897AC | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Mosfet, N & P-Ch, 40V, 6.1A, Soic-8; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; N and P-Channel | ||||
| PD | 900 milliwatts | 900 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| Package Type | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
