MOSFET P-CH 40V 11A 8SOIC
MOSFETs SO-8 Product overview: FDS4675 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-FDS4675 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 067078-FDS4675
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.4W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 11A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 56nC @ 4.5V
Max Input Capacitance: 4350pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
P-Channel 40V 11A (Ta) 2.4W (Ta) Surface Mount 8-SOIC
P-Channel 40V 11A (Ta) 2.4W (Ta) Surface Mount 8-SOIC
P-Channel 40V 11A (Ta) 2.4W (Ta) Surface Mount 8-SOIC
POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 40V, 0.013OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SO-8. FREE 2 YEAR RADWELL WARRANTY
MOSFET P-CH 40V 11A 8SOIC
P CHANNEL MOSFET, -40V, 11A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
P CHANNEL MOSFET, -40V, 11A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:11A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FDS4675 | 2088-FDS4675 | 067078-FDS4675 | FDS4675DKR-ND | 16130402 | FDS4675 | FDS4675 | 34C0167 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS4675 | Single FETs, MOSFETs | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | P Channel Mosfet, -40V, 11A, Soic; Channel Type Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 40 volts | 40 volts | ||||||
| IDSS | 11000 milliamps | 11000 milliamps | ||||||
| PD | 2400 milliwatts | 2.4 milliwatts | 2400 milliwatts |
