Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 016133-FDS3572
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 8.9A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1990pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 8.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 2,500
N-Channel 80V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 80V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
N-Channel 80V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
MOSFET N-CH 80V 8.9A 8SOIC
N CHANNEL MOSFET, 80V, 8.9A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:8.9A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET, N CHANNEL, 80V, 8.9A, SOIC-8; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:8.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 016133-FDS3572 | FDS3572TR-ND | FDS3572 | FDS3572 | 09J6252 | 29X6694 | 31Y1390 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDS3572 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 80V, 8.9A, Soic; Transistor Polarity Onsemi | Mosfet, N Channel, 80V, 8.9A, Soic-8; Channel Type Onsemi | Mosfet Transistor, N Channel, 8.9 A, 80 V, 0.014 Ohm, 10 V, 4 V Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 80 volts | ||||||
| PD | 2500 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) |
